TY - JOUR
T1 - Fabrication of multilevel switching high density phase change data recording using stacked GeTe/GeSbTe structure
AU - Hong, Sung Hoon
AU - Lee, Heon
AU - Kim, Kang In
AU - Choi, Yunjung
AU - Lee, Young Kook
PY - 2011/8
Y1 - 2011/8
N2 - The multilevel switching characteristics of stacked phase change materials with the structures of Ge2Sb2Te5, AgInSbTe/Ge2Sb2Te5, and GeTe/Ge 2Sb2Te5 were investigated at the nano scale using nanoimprint lithography and conductive atomic force microscopy. Stacked phase change materials devices consisting of nano pillars 200 nm in diameter were fabricated using nanoimprint lithography, and their electrical characteristics were evaluated using conductive atomic force microscopy, with a pulse generator and a voltage source. The stacked GeTe/Ge2Sb 2Te5 phase change materials exhibited three levels of resistance with a difference of 2 orders in magnitude between them, while the single-layer and stacked phase change materials with similar electrical resistances, such as Ge2Sb2Te5/AgInSbTe exhibited only bi level switching characteristics.
AB - The multilevel switching characteristics of stacked phase change materials with the structures of Ge2Sb2Te5, AgInSbTe/Ge2Sb2Te5, and GeTe/Ge 2Sb2Te5 were investigated at the nano scale using nanoimprint lithography and conductive atomic force microscopy. Stacked phase change materials devices consisting of nano pillars 200 nm in diameter were fabricated using nanoimprint lithography, and their electrical characteristics were evaluated using conductive atomic force microscopy, with a pulse generator and a voltage source. The stacked GeTe/Ge2Sb 2Te5 phase change materials exhibited three levels of resistance with a difference of 2 orders in magnitude between them, while the single-layer and stacked phase change materials with similar electrical resistances, such as Ge2Sb2Te5/AgInSbTe exhibited only bi level switching characteristics.
UR - http://www.scopus.com/inward/record.url?scp=80051993094&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.081201
DO - 10.1143/JJAP.50.081201
M3 - Article
AN - SCOPUS:80051993094
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 8 PART 1
M1 - 081201
ER -