Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate

Tae Geun Kim; Jongseung Hwang; Jeongmin Kang; Sangsig Kim; Sung Woo Hwang

doi:10.1166/jnn.2011.3386

Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate

Tae Geun Kim, Jongseung Hwang, Jeongmin Kang, Sangsig Kim, Sung Woo Hwang

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured currentvoltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 102. The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.

Original language	English
Pages (from-to)	1393-1396
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2011.3386
Publication status	Published - 2011 Feb

Keywords

Carbon nanotube
Electron-beam lithography
Field-effect transistor
Flexible
Nanometer-scale
Transport characteristics

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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abstract = "We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured currentvoltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 102. The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.",

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author = "Kim, {Tae Geun} and Jongseung Hwang and Jeongmin Kang and Sangsig Kim and Hwang, {Sung Woo}",

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AU - Kang, Jeongmin

AU - Kim, Sangsig

AU - Hwang, Sung Woo

PY - 2011/2

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N2 - We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured currentvoltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 102. The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.

AB - We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured currentvoltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 102. The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.

KW - Carbon nanotube

KW - Electron-beam lithography

KW - Field-effect transistor

KW - Flexible

KW - Nanometer-scale

KW - Transport characteristics

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Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate

Abstract

Keywords

ASJC Scopus subject areas

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