Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths

Youngwoon Kho; James Jungho Pak; Jaeyoung Oh; Donghwan Kim; Won Kyu Park; Myoung Su Yang

Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths

Youngwoon Kho, James Jungho Pak, Jaeyoung Oh, Donghwan Kim, Won Kyu Park, Myoung Su Yang

Research output: Contribution to journal › Article › peer-review

Abstract

We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm²/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10^-11 A at V_DS = -5 V, and an on/off current ratio of 9.68×10⁶ at V_DS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.

Original language	English
Pages (from-to)	1068-1072
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	41
Issue number	6
Publication status	Published - 2002 Dec

Keywords

Fabrication
Polysilicon
Sequential lateral solidification(SLS)
Thin film transistor(TFT)

ASJC Scopus subject areas

General Physics and Astronomy

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Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths. / Kho, Youngwoon; Pak, James Jungho; Oh, Jaeyoung et al.
In: Journal of the Korean Physical Society, Vol. 41, No. 6, 12.2002, p. 1068-1072.

Research output: Contribution to journal › Article › peer-review

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title = "Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths",

abstract = "We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10-11 A at VDS = -5 V, and an on/off current ratio of 9.68×106 at VDS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.",

keywords = "Fabrication, Polysilicon, Sequential lateral solidification(SLS), Thin film transistor(TFT)",

author = "Youngwoon Kho and Pak, {James Jungho} and Jaeyoung Oh and Donghwan Kim and Park, {Won Kyu} and Yang, {Myoung Su}",

year = "2002",

month = dec,

language = "English",

volume = "41",

pages = "1068--1072",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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T1 - Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths

AU - Kho, Youngwoon

AU - Pak, James Jungho

AU - Oh, Jaeyoung

AU - Kim, Donghwan

AU - Park, Won Kyu

AU - Yang, Myoung Su

PY - 2002/12

Y1 - 2002/12

N2 - We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10-11 A at VDS = -5 V, and an on/off current ratio of 9.68×106 at VDS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.

AB - We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10-11 A at VDS = -5 V, and an on/off current ratio of 9.68×106 at VDS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.

KW - Fabrication

KW - Polysilicon

KW - Sequential lateral solidification(SLS)

KW - Thin film transistor(TFT)

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M3 - Article

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SN - 0374-4884

VL - 41

SP - 1068

EP - 1072

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths

Abstract

Keywords

ASJC Scopus subject areas

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