Keyphrases
GaN-based Light-emitting Diodes
100%
Light-emitting Diode Device
100%
Patterned Sapphire Substrate
100%
SiNx
100%
Photonic Crystal
100%
Nanoimprint Lithography
100%
Patterned Light
33%
Light Extraction
33%
Crystal Pattern
33%
Electrical Properties
16%
Diode Structures
16%
I-V Characteristics
16%
ITO Electrode
16%
P-GaN
16%
Plasma Etching
16%
Ultraviolet Nanoimprint Lithography (UV-NIL)
16%
Lithography Process
16%
Finite-difference Time-domain Simulation
16%
ITO Layer
16%
Three-dimensional Finite-difference Time-domain
16%
Pattern-based Approach
16%
Electroluminescence Intensity
16%
Electrode Layer
16%
Material Science
Lithography
100%
Sapphire
100%
Light-Emitting Diode
100%
Photonic Crystal
100%
Indium Tin Oxide
42%
Current-Voltage Characteristic
14%
Electroluminescence
14%
Finite Difference
14%
Plasma Etching
14%