Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals

Dong Won Kim; Kyoungah Cho; Hyunsuk Kim; Byung Moo Moon; Sangsig Kim

doi:10.1016/j.mee.2007.01.260

Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals

Dong Won Kim, Kyoungah Cho, Hyunsuk Kim, Byung Moo Moon, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p⁺ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150 °C to form the channels for the TFTs, and Al₂O₃ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO₂ layer exhibits a mobility of 0.21 cm²/V s and an I_on/I_off ratio of 1.5 × 10², and a representative top-gate field-effect TFT with a top-gate Al₂O₃ layer provides a field-effect mobility of 0.026 cm²/V s and an I_on/I_off ratio of 2.5 × 10². The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper.

Original language	English
Pages (from-to)	1643-1646
Number of pages	4
Journal	Microelectronic Engineering
Volume	84
Issue number	5-8
DOIs	https://doi.org/10.1016/j.mee.2007.01.260
Publication status	Published - 2007 May

Bibliographical note

Funding Information:
This study was supported by the National Research Program for the 0.1 Terabit Non-volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).

Keywords

Bottom-gate
Core-shell
Nanocrystal
Top-gate and TFT

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2007.01.260

Cite this

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title = "Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals",

abstract = "Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150 °C to form the channels for the TFTs, and Al2O3 layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO2 layer exhibits a mobility of 0.21 cm2/V s and an Ion/Ioff ratio of 1.5 × 102, and a representative top-gate field-effect TFT with a top-gate Al2O3 layer provides a field-effect mobility of 0.026 cm2/V s and an Ion/Ioff ratio of 2.5 × 102. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper.",

keywords = "Bottom-gate, Core-shell, Nanocrystal, Top-gate and TFT",

author = "Kim, {Dong Won} and Kyoungah Cho and Hyunsuk Kim and Moon, {Byung Moo} and Sangsig Kim",

note = "Funding Information: This study was supported by the National Research Program for the 0.1 Terabit Non-volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).",

year = "2007",

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doi = "10.1016/j.mee.2007.01.260",

language = "English",

volume = "84",

pages = "1643--1646",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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AU - Kim, Dong Won

AU - Cho, Kyoungah

AU - Kim, Hyunsuk

AU - Moon, Byung Moo

AU - Kim, Sangsig

N1 - Funding Information: This study was supported by the National Research Program for the 0.1 Terabit Non-volatile Memory Development (10022965-2005-11), National Research Laboratory (M10500000045-05J0000-04510), National R&D Project for Nano Science and Technology (10022916-2005-21), Center for Integrated-Nano-Systems (CINS) of Korea Research Foundation (KRF-2005-005-D00087).

PY - 2007/5

Y1 - 2007/5

N2 - Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150 °C to form the channels for the TFTs, and Al2O3 layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO2 layer exhibits a mobility of 0.21 cm2/V s and an Ion/Ioff ratio of 1.5 × 102, and a representative top-gate field-effect TFT with a top-gate Al2O3 layer provides a field-effect mobility of 0.026 cm2/V s and an Ion/Ioff ratio of 2.5 × 102. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper.

AB - Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150 °C to form the channels for the TFTs, and Al2O3 layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO2 layer exhibits a mobility of 0.21 cm2/V s and an Ion/Ioff ratio of 1.5 × 102, and a representative top-gate field-effect TFT with a top-gate Al2O3 layer provides a field-effect mobility of 0.026 cm2/V s and an Ion/Ioff ratio of 2.5 × 102. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper.

KW - Bottom-gate

KW - Core-shell

KW - Nanocrystal

KW - Top-gate and TFT

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Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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