Fabrication of ZnO quantum dots embedded in an amorphous oxide layer

Kyoung Kook Kim, Nobuyuki Koguchi, Young Woo Ok, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)


The fabrication of ZnO quantum dots (QD) by the growth of SiO 2/ZnO films/Si substrate and using subsequent rapid-thermal annealing and radio-frquency magnetron sputtering in a N2 ambient was investigated. It was observed from the transmission electron microscopy (TEM) that the QDs, with 3-7 nm in size, were formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850°C. It was also observed from photoluminescence (PL) that the optical properties of the QDs were improved with increasing annealing time and temperature. The results from TEM and PL show that the broad spectra is due to quantum confinement effect.

Original languageEnglish
Pages (from-to)3810-3812
Number of pages3
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2004 May 10
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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