Fabrication of ZnO quantum dots embedded in an amorphous oxide layer

Kyoung Kook Kim; Nobuyuki Koguchi; Young Woo Ok; Tae Yeon Seong; Seong Ju Park

doi:10.1063/1.1741030

Fabrication of ZnO quantum dots embedded in an amorphous oxide layer

Kyoung Kook Kim, Nobuyuki Koguchi, Young Woo Ok, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

The fabrication of ZnO quantum dots (QD) by the growth of SiO ₂/ZnO films/Si substrate and using subsequent rapid-thermal annealing and radio-frquency magnetron sputtering in a N₂ ambient was investigated. It was observed from the transmission electron microscopy (TEM) that the QDs, with 3-7 nm in size, were formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850°C. It was also observed from photoluminescence (PL) that the optical properties of the QDs were improved with increasing annealing time and temperature. The results from TEM and PL show that the broad spectra is due to quantum confinement effect.

Original language	English
Pages (from-to)	3810-3812
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	19
DOIs	https://doi.org/10.1063/1.1741030
Publication status	Published - 2004 May 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1741030

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title = "Fabrication of ZnO quantum dots embedded in an amorphous oxide layer",

abstract = "The fabrication of ZnO quantum dots (QD) by the growth of SiO 2/ZnO films/Si substrate and using subsequent rapid-thermal annealing and radio-frquency magnetron sputtering in a N2 ambient was investigated. It was observed from the transmission electron microscopy (TEM) that the QDs, with 3-7 nm in size, were formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850°C. It was also observed from photoluminescence (PL) that the optical properties of the QDs were improved with increasing annealing time and temperature. The results from TEM and PL show that the broad spectra is due to quantum confinement effect.",

author = "Kim, {Kyoung Kook} and Nobuyuki Koguchi and Ok, {Young Woo} and Seong, {Tae Yeon} and Park, {Seong Ju}",

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AU - Kim, Kyoung Kook

AU - Koguchi, Nobuyuki

AU - Ok, Young Woo

AU - Seong, Tae Yeon

AU - Park, Seong Ju

PY - 2004/5/10

Y1 - 2004/5/10

N2 - The fabrication of ZnO quantum dots (QD) by the growth of SiO 2/ZnO films/Si substrate and using subsequent rapid-thermal annealing and radio-frquency magnetron sputtering in a N2 ambient was investigated. It was observed from the transmission electron microscopy (TEM) that the QDs, with 3-7 nm in size, were formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850°C. It was also observed from photoluminescence (PL) that the optical properties of the QDs were improved with increasing annealing time and temperature. The results from TEM and PL show that the broad spectra is due to quantum confinement effect.

AB - The fabrication of ZnO quantum dots (QD) by the growth of SiO 2/ZnO films/Si substrate and using subsequent rapid-thermal annealing and radio-frquency magnetron sputtering in a N2 ambient was investigated. It was observed from the transmission electron microscopy (TEM) that the QDs, with 3-7 nm in size, were formed and embedded in the amorphous silicon oxide interfacial layer when annealed at 850°C. It was also observed from photoluminescence (PL) that the optical properties of the QDs were improved with increasing annealing time and temperature. The results from TEM and PL show that the broad spectra is due to quantum confinement effect.

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JO - Applied Physics Letters

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Fabrication of ZnO quantum dots embedded in an amorphous oxide layer

Abstract

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