Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp

T. Y. Oh; J. H. Kwon; M. H. Chung; H. S. Bae; S. Chang; J. H. Park; K. Y. Dong; B. K. Ju

Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp

T. Y. Oh, J. H. Kwon, M. H. Chung, H. S. Bae, S. Chang, J. H. Park, K. Y. Dong, B. K. Ju

School of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm²/Vs, current on/off ratio of 1.6×10³, and subthreshold slope of 0.59 V/dec.

Original language	English
Pages	1841-1842
Number of pages	2
Publication status	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11

Other

Other	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	09/12/9 → 09/12/11

ASJC Scopus subject areas

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

@conference{5b029fb9b929420685e2bc68fccc76d2,

title = "Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp",

abstract = "We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm2/Vs, current on/off ratio of 1.6×103, and subthreshold slope of 0.59 V/dec.",

author = "Oh, {T. Y.} and Kwon, {J. H.} and Chung, {M. H.} and Bae, {H. S.} and S. Chang and Park, {J. H.} and Dong, {K. Y.} and Ju, {B. K.}",

year = "2009",

language = "English",

pages = "1841--1842",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

TY - CONF

T1 - Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp

AU - Oh, T. Y.

AU - Kwon, J. H.

AU - Chung, M. H.

AU - Bae, H. S.

AU - Chang, S.

AU - Park, J. H.

AU - Dong, K. Y.

AU - Ju, B. K.

PY - 2009

Y1 - 2009

N2 - We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm2/Vs, current on/off ratio of 1.6×103, and subthreshold slope of 0.59 V/dec.

AB - We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm2/Vs, current on/off ratio of 1.6×103, and subthreshold slope of 0.59 V/dec.

UR - http://www.scopus.com/inward/record.url?scp=77954169762&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954169762&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954169762

SP - 1841

EP - 1842

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp

Abstract

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ASJC Scopus subject areas

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