Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp

T. Y. Oh, J. H. Kwon, M. H. Chung, H. S. Bae, S. Chang, J. H. Park, K. Y. Dong, B. K. Ju

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm2/Vs, current on/off ratio of 1.6×103, and subthreshold slope of 0.59 V/dec.

    Original languageEnglish
    Pages1841-1842
    Number of pages2
    Publication statusPublished - 2009
    Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
    Duration: 2009 Dec 92009 Dec 11

    Other

    Other16th International Display Workshops, IDW '09
    Country/TerritoryJapan
    CityMiyazaki
    Period09/12/909/12/11

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Human-Computer Interaction
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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