Abstract
We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm2/Vs, current on/off ratio of 1.6×103, and subthreshold slope of 0.59 V/dec.
Original language | English |
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Pages | 1841-1842 |
Number of pages | 2 |
Publication status | Published - 2009 |
Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
Other | 16th International Display Workshops, IDW '09 |
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Country/Territory | Japan |
City | Miyazaki |
Period | 09/12/9 → 09/12/11 |
ASJC Scopus subject areas
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials