Facet-selective growth on nanowires yields multi-component nanostructures and photonic devices

Thomas J. Kempa, Sun Kyung Kim, Robert W. Day, Hong Gyu Park, Daniel G. Nocera, Charles M. Lieber

    Research output: Contribution to journalArticlepeer-review

    46 Citations (Scopus)

    Abstract

    Enhanced synthetic control of the morphology, crystal structure, and composition of nanostructures can drive advances in nanoscale devices. Axial and radial semiconductor nanowires are examples of nanostructures with one and two structural degrees of freedom, respectively, and their synthetically tuned and modulated properties have led to advances in nanotransistor, nanophotonic, and thermoelectric devices. Similarly, developing methods that allow for synthetic control of greater than two degrees of freedom could enable new opportunities for functional nanostructures. Here we demonstrate the first regioselective nanowire shell synthesis in studies of Ge and Si growth on faceted Si nanowire surfaces. The selectively deposited Ge is crystalline, and its facet position can be synthetically controlled in situ. We use this synthesis to prepare electrically addressable nanocavities into which solution soluble species such as Au nanoparticles can be incorporated. The method furnishes multicomponent nanostructures with unique photonic properties and presents a more sophisticated nanodevice platform for future applications in catalysis and photodetection.

    Original languageEnglish
    Pages (from-to)18354-18357
    Number of pages4
    JournalJournal of the American Chemical Society
    Volume135
    Issue number49
    DOIs
    Publication statusPublished - 2013 Dec 11

    ASJC Scopus subject areas

    • Catalysis
    • General Chemistry
    • Biochemistry
    • Colloid and Surface Chemistry

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