Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings

Lee Woon Jang; Dae Woo Jeon; Tae Hoon Chung; Alexander Y. Polyakov; Han Su Cho; Jin Hyeon Yun; Jin Woo Ju; Jong Hyeob Baek; Joo Won Choi; In Hwan Lee

doi:10.1021/am404285s

Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings

Lee Woon Jang, Dae Woo Jeon, Tae Hoon Chung, Alexander Y. Polyakov, Han Su Cho, Jin Hyeon Yun, Jin Woo Ju, Jong Hyeob Baek, Joo Won Choi, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.

Original language	English
Pages (from-to)	985-989
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	2
DOIs	https://doi.org/10.1021/am404285s
Publication status	Published - 2014 Jan 22
Externally published	Yes

Keywords

EC-PEC
GaN LED
lift-off
nanostructure

ASJC Scopus subject areas

General Materials Science

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10.1021/am404285s

Cite this

@article{55078c904ebe4cb2a9bfdf4b80d1014e,

title = "Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings",

abstract = "Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.",

keywords = "EC-PEC, GaN LED, lift-off, nanostructure",

author = "Jang, {Lee Woon} and Jeon, {Dae Woo} and Chung, {Tae Hoon} and Polyakov, {Alexander Y.} and Cho, {Han Su} and Yun, {Jin Hyeon} and Ju, {Jin Woo} and Baek, {Jong Hyeob} and Choi, {Joo Won} and Lee, {In Hwan}",

year = "2014",

month = jan,

day = "22",

doi = "10.1021/am404285s",

language = "English",

volume = "6",

pages = "985--989",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings

AU - Jang, Lee Woon

AU - Jeon, Dae Woo

AU - Chung, Tae Hoon

AU - Polyakov, Alexander Y.

AU - Cho, Han Su

AU - Yun, Jin Hyeon

AU - Ju, Jin Woo

AU - Baek, Jong Hyeob

AU - Choi, Joo Won

AU - Lee, In Hwan

PY - 2014/1/22

Y1 - 2014/1/22

N2 - Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.

AB - Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.

KW - EC-PEC

KW - GaN LED

KW - lift-off

KW - nanostructure

UR - http://www.scopus.com/inward/record.url?scp=84892923240&partnerID=8YFLogxK

U2 - 10.1021/am404285s

DO - 10.1021/am404285s

M3 - Article

AN - SCOPUS:84892923240

SN - 1944-8244

VL - 6

SP - 985

EP - 989

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 2

ER -

Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings

Abstract

Keywords

ASJC Scopus subject areas

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