Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.
|Number of pages||5|
|Journal||ACS Applied Materials and Interfaces|
|Publication status||Published - 2014 Jan 22|
- GaN LED
ASJC Scopus subject areas
- Materials Science(all)