Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Hochan Chang; Do Hoon Lee; Hyun Soo Kim; Jonghyurk Park; Byung Yang Lee

doi:10.1186/s11671-018-2774-0

Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Hochan Chang, Do Hoon Lee, Hyun Soo Kim, Jonghyurk Park, Byung Yang Lee

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 10⁵, transconductance around 47 nS, and mobility around 0.175 cm² V^{− 1} s^{− 1}. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage V_ds, showing maximum photoresponsivity at V_ds = 7 V.

Original language	English
Article number	413
Journal	Nanoscale Research Letters
Volume	13
DOIs	https://doi.org/10.1186/s11671-018-2774-0
Publication status	Published - 2018

Bibliographical note

Publisher Copyright:
© 2018, The Author(s).

Keywords

Heat treatment
Photodetectors
Self-assembly
Zinc oxide nanowires

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1186/s11671-018-2774-0

Cite this

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title = "Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection",

abstract = "We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.",

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journal = "Nanoscale Research Letters",

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AU - Chang, Hochan

AU - Lee, Do Hoon

AU - Kim, Hyun Soo

AU - Park, Jonghyurk

AU - Lee, Byung Yang

PY - 2018

Y1 - 2018

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AB - We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.

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KW - Photodetectors

KW - Self-assembly

KW - Zinc oxide nanowires

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VL - 13

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

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Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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