Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications

Dong Sun Kim; Chun Bae Lim; Seung Won Jung; Du Seok Oh; Hyung Tae Kim; Won Joon Ho; Ju Young Jung; Jong Pil Shim; Tae Young Kim; Kwang S. Suh

doi:10.1109/IPFA.2012.6306314

Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications

Dong Sun Kim, Chun Bae Lim, Seung Won Jung, Du Seok Oh, Hyung Tae Kim, Won Joon Ho, Ju Young Jung, Jong Pil Shim, Tae Young Kim, Kwang S. Suh

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

Optical microscope and FIB were widely used to find out defect locations in display panels. But failure analysis of LTPS TFTs is getting more difficult to detect the locations than that of (a-Si:H) TFTs. We adopted FIB and EMMI tool and found the leakage path on some special function failure such as line defect in display panel. Analysis results would help to find out defects and improve the yield by introducing right analysis method of FIB/EMMI tools in display panels.

Original language	English
Title of host publication	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
DOIs	https://doi.org/10.1109/IPFA.2012.6306314
Publication status	Published - 2012
Event	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 - Singapore, Singapore Duration: 2012 Jul 2 → 2012 Jul 6

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Other

Other	2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012
Country/Territory	Singapore
City	Singapore
Period	12/7/2 → 12/7/6

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2012.6306314

Cite this

Kim, D. S., Lim, C. B., Jung, S. W., Oh, D. S., Kim, H. T., Ho, W. J., Jung, J. Y., Shim, J. P., Kim, T. Y., & Suh, K. S. (2012). Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012 Article 6306314 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2012.6306314

Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications. / Kim, Dong Sun; Lim, Chun Bae; Jung, Seung Won et al.
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. 6306314 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, DS, Lim, CB, Jung, SW, Oh, DS, Kim, HT, Ho, WJ, Jung, JY, Shim, JP, Kim, TY & Suh, KS 2012, Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications. in 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012., 6306314, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012, Singapore, Singapore, 12/7/2. https://doi.org/10.1109/IPFA.2012.6306314

Kim DS, Lim CB, Jung SW, Oh DS, Kim HT, Ho WJ et al. Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications. In 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. 6306314. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2012.6306314

Kim, Dong Sun ; Lim, Chun Bae ; Jung, Seung Won et al. / Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications. 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2012. 2012. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications",

abstract = "Optical microscope and FIB were widely used to find out defect locations in display panels. But failure analysis of LTPS TFTs is getting more difficult to detect the locations than that of (a-Si:H) TFTs. We adopted FIB and EMMI tool and found the leakage path on some special function failure such as line defect in display panel. Analysis results would help to find out defects and improve the yield by introducing right analysis method of FIB/EMMI tools in display panels.",

author = "Kim, {Dong Sun} and Lim, {Chun Bae} and Jung, {Seung Won} and Oh, {Du Seok} and Kim, {Hyung Tae} and Ho, {Won Joon} and Jung, {Ju Young} and Shim, {Jong Pil} and Kim, {Tae Young} and Suh, {Kwang S.}",

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AB - Optical microscope and FIB were widely used to find out defect locations in display panels. But failure analysis of LTPS TFTs is getting more difficult to detect the locations than that of (a-Si:H) TFTs. We adopted FIB and EMMI tool and found the leakage path on some special function failure such as line defect in display panel. Analysis results would help to find out defects and improve the yield by introducing right analysis method of FIB/EMMI tools in display panels.

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Failure analysis of latent damage in low temperature poly-silicon TFT for OLED applications

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