Fast neutron irradiation effects in n-GaN

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; S. J. Pearton; N. G. Kolin; D. I. Merkurisov; V. M. Boiko; Cheul Ro Lee; In Hwan Lee

doi:10.1116/1.2713406

Fast neutron irradiation effects in n-GaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, Cheul Ro Lee, In Hwan Lee

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

The electrical properties and deep level spectra in undoped n-GaN films irradiated by fast neutrons are reported. The electron removal rate was ∼5 cm^-1, and the dominant deep states introduced by neutron damage were electron traps with activation energy of 0.75 eV. For high doses of 1.7 × 10¹⁷-10¹⁸ cm^-2 the material becomes semi-insulating n-type with the Fermi level pinned near E_c-0.85 eV. Deep level spectra are dominated by electron traps with activation energy of 0.75 eV, close to the energy of the Fermi level pinning in heavily irradiated material. Neutron irradiation also introduces a high density of centers giving rise to strong persistent photocapacitance. The observed phenomena are explained under the assumption that the dominant defects in neutron irradiated GaN are disordered regions produced by high-energy recoil atoms.

Original language	English
Pages (from-to)	436-442
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	2
DOIs	https://doi.org/10.1116/1.2713406
Publication status	Published - 2007
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM and IPC was supported in part by a grant from ICTS (Grant No. 3029). The authors also thank E. F. Astakhova for preparing Schottky diodes.

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{73b03f3eb3bd404581d48973796556eb,

title = "Fast neutron irradiation effects in n-GaN",

abstract = "The electrical properties and deep level spectra in undoped n-GaN films irradiated by fast neutrons are reported. The electron removal rate was ∼5 cm-1, and the dominant deep states introduced by neutron damage were electron traps with activation energy of 0.75 eV. For high doses of 1.7 × 1017-1018 cm-2 the material becomes semi-insulating n-type with the Fermi level pinned near Ec-0.85 eV. Deep level spectra are dominated by electron traps with activation energy of 0.75 eV, close to the energy of the Fermi level pinning in heavily irradiated material. Neutron irradiation also introduces a high density of centers giving rise to strong persistent photocapacitance. The observed phenomena are explained under the assumption that the dominant defects in neutron irradiated GaN are disordered regions produced by high-energy recoil atoms.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Pearton, {S. J.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and Lee, {Cheul Ro} and Lee, {In Hwan}",

note = "Funding Information: The work at IRM and IPC was supported in part by a grant from ICTS (Grant No. 3029). The authors also thank E. F. Astakhova for preparing Schottky diodes. ",

year = "2007",

doi = "10.1116/1.2713406",

language = "English",

volume = "25",

pages = "436--442",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Fast neutron irradiation effects in n-GaN

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Pearton, S. J.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Lee, Cheul Ro

AU - Lee, In Hwan

N1 - Funding Information: The work at IRM and IPC was supported in part by a grant from ICTS (Grant No. 3029). The authors also thank E. F. Astakhova for preparing Schottky diodes.

PY - 2007

Y1 - 2007

N2 - The electrical properties and deep level spectra in undoped n-GaN films irradiated by fast neutrons are reported. The electron removal rate was ∼5 cm-1, and the dominant deep states introduced by neutron damage were electron traps with activation energy of 0.75 eV. For high doses of 1.7 × 1017-1018 cm-2 the material becomes semi-insulating n-type with the Fermi level pinned near Ec-0.85 eV. Deep level spectra are dominated by electron traps with activation energy of 0.75 eV, close to the energy of the Fermi level pinning in heavily irradiated material. Neutron irradiation also introduces a high density of centers giving rise to strong persistent photocapacitance. The observed phenomena are explained under the assumption that the dominant defects in neutron irradiated GaN are disordered regions produced by high-energy recoil atoms.

AB - The electrical properties and deep level spectra in undoped n-GaN films irradiated by fast neutrons are reported. The electron removal rate was ∼5 cm-1, and the dominant deep states introduced by neutron damage were electron traps with activation energy of 0.75 eV. For high doses of 1.7 × 1017-1018 cm-2 the material becomes semi-insulating n-type with the Fermi level pinned near Ec-0.85 eV. Deep level spectra are dominated by electron traps with activation energy of 0.75 eV, close to the energy of the Fermi level pinning in heavily irradiated material. Neutron irradiation also introduces a high density of centers giving rise to strong persistent photocapacitance. The observed phenomena are explained under the assumption that the dominant defects in neutron irradiated GaN are disordered regions produced by high-energy recoil atoms.

UR - http://www.scopus.com/inward/record.url?scp=34047178474&partnerID=8YFLogxK

U2 - 10.1116/1.2713406

DO - 10.1116/1.2713406

M3 - Article

AN - SCOPUS:34047178474

SN - 1071-1023

VL - 25

SP - 436

EP - 442

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Fast neutron irradiation effects in n-GaN

Abstract

Bibliographical note

ASJC Scopus subject areas

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