The electrical properties and deep level spectra in undoped n-GaN films irradiated by fast neutrons are reported. The electron removal rate was ∼5 cm-1, and the dominant deep states introduced by neutron damage were electron traps with activation energy of 0.75 eV. For high doses of 1.7 × 1017-1018 cm-2 the material becomes semi-insulating n-type with the Fermi level pinned near Ec-0.85 eV. Deep level spectra are dominated by electron traps with activation energy of 0.75 eV, close to the energy of the Fermi level pinning in heavily irradiated material. Neutron irradiation also introduces a high density of centers giving rise to strong persistent photocapacitance. The observed phenomena are explained under the assumption that the dominant defects in neutron irradiated GaN are disordered regions produced by high-energy recoil atoms.
|Number of pages||7|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2007|
Bibliographical noteFunding Information:
The work at IRM and IPC was supported in part by a grant from ICTS (Grant No. 3029). The authors also thank E. F. Astakhova for preparing Schottky diodes.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering