Abstract
In this study, we fabricated an island-structured silicon nanowire (SiNW) field-effect transistor (FET) on an Ecoflex substrate and analyzed the device reliability against the bending fatigue. A SiNW-FET was fabricated on a plastic substrate and this FET on the plastic substrate was transferred onto the Ecoflex substrate. Compared to a SiNW-FET on a plastic substrate, the SiNW-FET with the island plastic structure on the Ecoflex substrate showed the stable electrical characteristics under various bending strain. Variations less than 10% of the threshold voltage and transconductance were observed under the bending strain of 15%. Moreover, the electrical characteristics were maintained even after 2000 bending cycles.
| Original language | English |
|---|---|
| Pages (from-to) | 12823-12826 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 16 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2016 Dec 1 |
Bibliographical note
Funding Information:This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2013R1A2A1A03070750 and NRF-2015R1A2A1A15055437), the Brain Korea 21 Plus Project in 2015 and Samsung Electronics.
Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
Keywords
- Ecoflex substrate
- Field-effect transistor
- Island structure
- Silicon-nanowire
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics