Abstract
In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p +-i-n + doped silicon nanowire channel. The transistor functions selectively in either a feedback FET (FBFET) or a tunneling FET mode by modulating the source-to-drain voltage, and it features an outstanding subthreshold swing characteristic of 6.15 mV dec-1 with an on/off current ratio (I on/I off) of approximately 106 in the feedback operating mode and of 41.3 mV dec-1 with I on/I off of ∼107 in the tunneling operating mode. Moreover, our device in the FBFET operation mode has memory characteristics with a retention time of 104 s and a program/erase endurance up to 103 cycles owing to the positive feedback loop in the channel region. This study demonstrates the promising potential of our devices in the development of multifunctional electronics.
| Original language | English |
|---|---|
| Article number | 435202 |
| Journal | Nanotechnology |
| Volume | 29 |
| Issue number | 43 |
| DOIs | |
| Publication status | Published - 2018 Aug 28 |
Bibliographical note
Funding Information:This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171); the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’); and the Brain Korea 21 Plus Project in 2018.
Publisher Copyright:
© 2018 IOP Publishing Ltd.
Keywords
- band-to-band tunneling
- feedback loop
- field-effect transistor
- silicon nanowires
- subthreshold swing
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering