Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

Alvaro Padilla; Chun Wing Yeung; Changhwan Shin; Chenming Hu; Tsu Jae King Liu

doi:10.1109/IEDM.2008.4796643

Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

Alvaro Padilla^*
, Chun Wing Yeung
, Changhwan Shin
, Chenming Hu
, Tsu Jae King Liu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

125 Citations (Scopus)

Abstract

A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I _ON/I _OFF ratio (∼10 ⁸) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796643
Publication status	Published - 2008
Externally published	Yes
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 2008 Dec 15 → 2008 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	08/12/15 → 08/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2008.4796643

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Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages. / Padilla, Alvaro; Yeung, Chun Wing; Shin, Changhwan et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796643 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Padilla, A, Yeung, CW, Shin, C, Hu, C & Liu, TJK 2008, Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796643, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796643

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title = "Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages",

abstract = "A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.",

author = "Alvaro Padilla and Yeung, \{Chun Wing\} and Changhwan Shin and Chenming Hu and Liu, \{Tsu Jae King\}",

year = "2008",

doi = "10.1109/IEDM.2008.4796643",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

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AU - Hu, Chenming

AU - Liu, Tsu Jae King

PY - 2008

Y1 - 2008

N2 - A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

AB - A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

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DO - 10.1109/IEDM.2008.4796643

M3 - Conference contribution

AN - SCOPUS:78650760310

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

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