Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jungmin Moon, Wan Sik Hwang, Hyun Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.

Original languageEnglish
Article number8010309
Pages (from-to)4242-4245
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 2017 Oct

Bibliographical note

Funding Information:
Manuscript received July 5, 2017; accepted August 2, 2017. Date of publication August 14, 2017; date of current version September 20, 2017. This work was supported by the Industrial Strategic Technology Development Program (Technology Development of Ge nMOS/pMOS FinFET for 10nm Technology Node) funded by the Ministry of Trade, Industry and Energy (MI, Korea) under Grant 10048594. The review of this paper was arranged by Editor H. Wong. (Corresponding author: Byung Jin Cho.) Y. Seo, T. I. Lee, H. J. Ahn, J. Moon, and B. J. Cho are with the School of Electrical Engineering, KAIST, Daejeon 305-701, South Korea (e-mail: bjcho@kaist.edu).

Publisher Copyright:
© 1963-2012 IEEE.


  • Fermi-level pinning (FLP)
  • Germanium
  • Schottky barrier height (SBH)
  • Titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2'. Together they form a unique fingerprint.

Cite this