Fermi level pinning in heavily neutron-irradiated GaN

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; N. G. Kolin; D. I. Merkurisov; V. M. Boiko; K. D. Shcherbatchev; V. T. Bublik; M. I. Voronova; I. H. Lee; C. R. Lee; S. J. Pearton; A. Dabirian; A. V. Osinsky

doi:10.1063/1.2361157

Fermi level pinning in heavily neutron-irradiated GaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, I. H. Lee, C. R. Lee, S. J. Pearton, A. Dabirian, A. V. Osinsky

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32 Citations (Scopus)

Abstract

Undoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated with fast reactor neutrons to the high fluence of 1018 cm-2. In such heavily irradiated samples the Fermi level is shown to be pinned in a narrow interval of Ec - (0.8-0.95) eV, irrespective of the starting sample properties. The Fermi level pinning position correlates with the measured Schottky barrier height in n -type GaN. The results are interpreted from the standpoint of the existence of the charge neutrality level in heavily disordered material. Based on published theoretical calculations and on deep level transient spectroscopy (measurements and lattice parameter measurements in irradiated material), it is proposed that the Fermi level could be pinned between the gallium-interstitial-related deep donors near Ec -0.8 eV and nitrogen-interstitial-related acceptors near Ec -0.9 eV

Original language	English
Article number	093715
Journal	Journal of Applied Physics
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.2361157
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Kolin, N. G., Merkurisov, D. I., Boiko, V. M., Shcherbatchev, K. D., Bublik, V. T., Voronova, M. I., Lee, I. H., Lee, C. R., Pearton, S. J., Dabirian, A., & Osinsky, A. V. (2006). Fermi level pinning in heavily neutron-irradiated GaN. Journal of Applied Physics, 100(9), [093715]. https://doi.org/10.1063/1.2361157

@article{84f0f5c15a5848a7ad48ee9e2b39278d,

title = "Fermi level pinning in heavily neutron-irradiated GaN",

abstract = "Undoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated with fast reactor neutrons to the high fluence of 1018 cm-2. In such heavily irradiated samples the Fermi level is shown to be pinned in a narrow interval of Ec - (0.8-0.95) eV, irrespective of the starting sample properties. The Fermi level pinning position correlates with the measured Schottky barrier height in n -type GaN. The results are interpreted from the standpoint of the existence of the charge neutrality level in heavily disordered material. Based on published theoretical calculations and on deep level transient spectroscopy (measurements and lattice parameter measurements in irradiated material), it is proposed that the Fermi level could be pinned between the gallium-interstitial-related deep donors near Ec -0.8 eV and nitrogen-interstitial-related acceptors near Ec -0.9 eV",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and Shcherbatchev, {K. D.} and Bublik, {V. T.} and Voronova, {M. I.} and Lee, {I. H.} and Lee, {C. R.} and Pearton, {S. J.} and A. Dabirian and Osinsky, {A. V.}",

note = "Funding Information: The work at IRM, at the Karpov Institute, and at the Institute of Rare Metals was supported in part by ISTC (Grant No. 3029). The authors would like to thank E.F. Astakhova for the Schottky diodes preparation.",

year = "2006",

doi = "10.1063/1.2361157",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Fermi level pinning in heavily neutron-irradiated GaN

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Shcherbatchev, K. D.

AU - Bublik, V. T.

AU - Voronova, M. I.

AU - Lee, I. H.

AU - Lee, C. R.

AU - Pearton, S. J.

AU - Dabirian, A.

AU - Osinsky, A. V.

N1 - Funding Information: The work at IRM, at the Karpov Institute, and at the Institute of Rare Metals was supported in part by ISTC (Grant No. 3029). The authors would like to thank E.F. Astakhova for the Schottky diodes preparation.

PY - 2006

Y1 - 2006

N2 - Undoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated with fast reactor neutrons to the high fluence of 1018 cm-2. In such heavily irradiated samples the Fermi level is shown to be pinned in a narrow interval of Ec - (0.8-0.95) eV, irrespective of the starting sample properties. The Fermi level pinning position correlates with the measured Schottky barrier height in n -type GaN. The results are interpreted from the standpoint of the existence of the charge neutrality level in heavily disordered material. Based on published theoretical calculations and on deep level transient spectroscopy (measurements and lattice parameter measurements in irradiated material), it is proposed that the Fermi level could be pinned between the gallium-interstitial-related deep donors near Ec -0.8 eV and nitrogen-interstitial-related acceptors near Ec -0.9 eV

AB - Undoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated with fast reactor neutrons to the high fluence of 1018 cm-2. In such heavily irradiated samples the Fermi level is shown to be pinned in a narrow interval of Ec - (0.8-0.95) eV, irrespective of the starting sample properties. The Fermi level pinning position correlates with the measured Schottky barrier height in n -type GaN. The results are interpreted from the standpoint of the existence of the charge neutrality level in heavily disordered material. Based on published theoretical calculations and on deep level transient spectroscopy (measurements and lattice parameter measurements in irradiated material), it is proposed that the Fermi level could be pinned between the gallium-interstitial-related deep donors near Ec -0.8 eV and nitrogen-interstitial-related acceptors near Ec -0.9 eV

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U2 - 10.1063/1.2361157

DO - 10.1063/1.2361157

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

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ER -

Fermi level pinning in heavily neutron-irradiated GaN

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