Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application

Young Hun Jeong; Kyoung Bum Kim; Young Jin Lee; Jeong Ho Cho; Byoung Ik Kim; Jong Hoo Paik; Sahn Nahm

doi:10.1143/JJAP.51.09MD04

Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ thick films for energy harvesting device application

Young Hun Jeong, Kyoung Bum Kim, Young Jin Lee, Jeong Ho Cho, Byoung Ik Kim, Jong Hoo Paik, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P _r = 20.6 μC/cm ², d ₃₃ = 370 pC/N, ε ^T ₃₃/ ε ₀ = 1185, and k _p = 0.44. Moreover, its d ₃₃ · g ₃₃, which can characterize high energy density material, is as large as approximately 13050 × 10 ^-15 m ²/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

Original language	English
Article number	09MD04
Journal	Japanese journal of applied physics
Volume	51
Issue number	9 PART3
DOIs	https://doi.org/10.1143/JJAP.51.09MD04
Publication status	Published - 2012 Sept

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ thick films for energy harvesting device application. / Jeong, Young Hun; Kim, Kyoung Bum; Lee, Young Jin et al.
In: Japanese journal of applied physics, Vol. 51, No. 9 PART3, 09MD04, 09.2012.

Research output: Contribution to journal › Article › peer-review

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title = "Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application",

abstract = "The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.",

author = "Jeong, {Young Hun} and Kim, {Kyoung Bum} and Lee, {Young Jin} and Cho, {Jeong Ho} and Kim, {Byoung Ik} and Paik, {Jong Hoo} and Sahn Nahm",

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T1 - Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application

AU - Jeong, Young Hun

AU - Kim, Kyoung Bum

AU - Lee, Young Jin

AU - Cho, Jeong Ho

AU - Kim, Byoung Ik

AU - Paik, Jong Hoo

AU - Nahm, Sahn

PY - 2012/9

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N2 - The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

AB - The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

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Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ thick films for energy harvesting device application

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