Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition

C. R. Cho; A. Grishin; B. M. Moon

doi:10.1080/10584580008215638

Ferroelectric Na_0.5K_0.5NbO₃ thin films by pulsed laser deposition

C. R. Cho, A. Grishin, B. M. Moon

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

Highly c-axis oriented single phase Na_0.5K_0.5NbO₃ (NKN) thin films have been deposited onto polycrystalline Pt₈₀Ir₂₀ substrates and SiO₂/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm², dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO₂/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO₂/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

Original language	English
Pages (from-to)	35-45
Number of pages	11
Journal	Integrated Ferroelectrics
Volume	31
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580008215638
Publication status	Published - 2000
Externally published	Yes
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 2000 Mar 12 → 2000 Mar 15

Keywords

Low loss
MFIS-diode
Preferential orientation
Self-assembling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580008215638

Cite this

@article{36ace96d1c8447e890b04dd6b87e9361,

title = "Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition",

abstract = "Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80Ir20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm2, dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.",

keywords = "Low loss, MFIS-diode, Preferential orientation, Self-assembling",

author = "Cho, {C. R.} and A. Grishin and Moon, {B. M.}",

year = "2000",

doi = "10.1080/10584580008215638",

language = "English",

volume = "31",

pages = "35--45",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition

AU - Cho, C. R.

AU - Grishin, A.

AU - Moon, B. M.

PY - 2000

Y1 - 2000

N2 - Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80Ir20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm2, dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

AB - Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80Ir20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm2, dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

KW - Low loss

KW - MFIS-diode

KW - Preferential orientation

KW - Self-assembling

UR - http://www.scopus.com/inward/record.url?scp=0034449696&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034449696&partnerID=8YFLogxK

U2 - 10.1080/10584580008215638

DO - 10.1080/10584580008215638

M3 - Conference article

AN - SCOPUS:0034449696

SN - 1058-4587

VL - 31

SP - 35

EP - 45

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -