Ferromagnetic semiconductor GaMnAs

Sanghoon Lee; J. H. Chung; Xinyu Liu; Jacek K. Furdyna; Brian J. Kirby

doi:10.1016/S1369-7021(09)70109-9

Ferromagnetic semiconductor GaMnAs

Sanghoon Lee, J. H. Chung, Xinyu Liu, Jacek K. Furdyna, Brian J. Kirby

Department of Physics

Research output: Contribution to journal › Review article › peer-review

51 Citations (Scopus)

Abstract

The newly-developing spintronics technology requires materials that allow control of both the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic semiconductors (SC) are considered suitable due to simultaneous presence of magnetic order and of semiconducting properties. GaMnAs is one of the most intensively studied ferromagnetic SC. In this paper we will review recent research and accomplishments regarding two technologically important properties - magnetic anisotropy and interlayer coupling - of GaMnAs-based multilayer structures, with an eye on their potential role in practical devices.

Original language	English
Pages (from-to)	14-21
Number of pages	8
Journal	Materials Today
Volume	12
Issue number	4
DOIs	https://doi.org/10.1016/S1369-7021(09)70109-9
Publication status	Published - 2009 Apr

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; by Korea University Grant; by KOSEF through the Nuclear R&D Programs (M20701050003-08N0105-00311); and by NSF Grant No. DMR06-03752.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S1369-7021(09)70109-9

Cite this

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title = "Ferromagnetic semiconductor GaMnAs",

abstract = "The newly-developing spintronics technology requires materials that allow control of both the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic semiconductors (SC) are considered suitable due to simultaneous presence of magnetic order and of semiconducting properties. GaMnAs is one of the most intensively studied ferromagnetic SC. In this paper we will review recent research and accomplishments regarding two technologically important properties - magnetic anisotropy and interlayer coupling - of GaMnAs-based multilayer structures, with an eye on their potential role in practical devices.",

author = "Sanghoon Lee and Chung, {J. H.} and Xinyu Liu and Furdyna, {Jacek K.} and Kirby, {Brian J.}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; by Korea University Grant; by KOSEF through the Nuclear R&D Programs (M20701050003-08N0105-00311); and by NSF Grant No. DMR06-03752.",

year = "2009",

month = apr,

doi = "10.1016/S1369-7021(09)70109-9",

language = "English",

volume = "12",

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journal = "Materials Today",

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T1 - Ferromagnetic semiconductor GaMnAs

AU - Lee, Sanghoon

AU - Chung, J. H.

AU - Liu, Xinyu

AU - Furdyna, Jacek K.

AU - Kirby, Brian J.

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) (No. R01-2008-000-10057-0); by the Seoul R&DB Program; by Korea University Grant; by KOSEF through the Nuclear R&D Programs (M20701050003-08N0105-00311); and by NSF Grant No. DMR06-03752.

PY - 2009/4

Y1 - 2009/4

N2 - The newly-developing spintronics technology requires materials that allow control of both the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic semiconductors (SC) are considered suitable due to simultaneous presence of magnetic order and of semiconducting properties. GaMnAs is one of the most intensively studied ferromagnetic SC. In this paper we will review recent research and accomplishments regarding two technologically important properties - magnetic anisotropy and interlayer coupling - of GaMnAs-based multilayer structures, with an eye on their potential role in practical devices.

AB - The newly-developing spintronics technology requires materials that allow control of both the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic semiconductors (SC) are considered suitable due to simultaneous presence of magnetic order and of semiconducting properties. GaMnAs is one of the most intensively studied ferromagnetic SC. In this paper we will review recent research and accomplishments regarding two technologically important properties - magnetic anisotropy and interlayer coupling - of GaMnAs-based multilayer structures, with an eye on their potential role in practical devices.

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U2 - 10.1016/S1369-7021(09)70109-9

DO - 10.1016/S1369-7021(09)70109-9

M3 - Review article

AN - SCOPUS:64049086666

SN - 1369-7021

VL - 12

SP - 14

EP - 21

JO - Materials Today

JF - Materials Today

IS - 4

ER -

Ferromagnetic semiconductor GaMnAs

Abstract

Bibliographical note

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