Ferromagnetism in GaN and SiC doped with transition metals

S. J. Pearton; Y. D. Park; C. R. Abernathy; M. E. Overberg; G. T. Thaler; J. Kim; F. Ren; J. M. Zavada; R. G. Wilson

doi:10.1016/j.tsf.2003.07.012

Ferromagnetism in GaN and SiC doped with transition metals

S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, J. Kim, F. Ren, J. M. Zavada, R. G. Wilson

Research output: Contribution to journal › Conference article › peer-review

52 Citations (Scopus)

Abstract

Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. Here we review the field of wide bandgap dilute magnetic semiconductors, such as GaN, SiC and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.

Original language	English
Pages (from-to)	493-501
Number of pages	9
Journal	Thin Solid Films
Volume	447-448
DOIs	https://doi.org/10.1016/j.tsf.2003.07.012
Publication status	Published - 2004 Jan 30
Externally published	Yes
Event	Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States Duration: 2002 Apr 28 → 2002 May 2

Bibliographical note

Funding Information:
The work at UF was partially supported by NSF-DMR 0101438 and by the US Army Research Office under grants nos. ARO DAAD 19-01-1-0710 and DAAD 19-02-1-0420,while the work at SNU was partially supported by KOSEF and Samsung Electronics Endowment through CSCMR and by the Seoul National University Research Foundation. The authors are very grateful to their collaborators A.F. Hebard, D.P. Norton, S.N.G. Chu, J.S. Lee and Z.G. Khim.

Keywords

Ferromagnetism
Photonic devices
Transition metals

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.07.012

Cite this

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title = "Ferromagnetism in GaN and SiC doped with transition metals",

abstract = "Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. Here we review the field of wide bandgap dilute magnetic semiconductors, such as GaN, SiC and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.",

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note = "Funding Information: The work at UF was partially supported by NSF-DMR 0101438 and by the US Army Research Office under grants nos. ARO DAAD 19-01-1-0710 and DAAD 19-02-1-0420,while the work at SNU was partially supported by KOSEF and Samsung Electronics Endowment through CSCMR and by the Seoul National University Research Foundation. The authors are very grateful to their collaborators A.F. Hebard, D.P. Norton, S.N.G. Chu, J.S. Lee and Z.G. Khim.; Proceedings of the 30th International Conference on Metallurgie ; Conference date: 28-04-2002 Through 02-05-2002",

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AU - Pearton, S. J.

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AU - Thaler, G. T.

AU - Kim, J.

AU - Ren, F.

AU - Zavada, J. M.

AU - Wilson, R. G.

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PY - 2004/1/30

Y1 - 2004/1/30

N2 - Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. Here we review the field of wide bandgap dilute magnetic semiconductors, such as GaN, SiC and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.

AB - Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. Here we review the field of wide bandgap dilute magnetic semiconductors, such as GaN, SiC and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.

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Ferromagnetism in GaN and SiC doped with transition metals

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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