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Ferromagnetism in GaN and SiC doped with transition metals
S. J. Pearton
*
, Y. D. Park
, C. R. Abernathy
, M. E. Overberg
, G. T. Thaler
, J. Kim
, F. Ren
, J. M. Zavada
, R. G. Wilson
*
Corresponding author for this work
Research output
:
Contribution to journal
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Conference article
›
peer-review
53
Citations (Scopus)
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Keyphrases
Ferromagnetism
100%
Photonic Devices
100%
Memory Device
50%
Band Gap
50%
Strong Potential
50%
Light Emission
50%
Electronic Devices
50%
Charge Carriers
50%
Room Temperature Ferromagnetism
50%
Logic Devices
50%
Curie Temperature
50%
Wide Bandgap
50%
Signal Processing
50%
Ultra-low Power
50%
Magnetism
50%
Semiconductor Electronics
50%
Signal Lights
50%
Dilute Magnetic Semiconductor
50%
Doped GaN
50%
Integrated Magnetic Sensor
50%
Semiconductor Spintronics
50%
Semiconductor Photonics
50%
High Bandwidth Memory
50%
Magnetic Ordering Temperature
50%
High-temperature Photonics
50%
Transition Metal Doping
50%
Transistor Laser
50%
High-speed Logic
50%
Material Science
Ferromagnetism
100%
Transition Metal
100%
Optical Device
66%
Transistor
33%
Charge Carrier
33%
Curie Temperature
33%
Magnetism
33%
Dilute Magnetic Semiconductor
33%