Few-layer black phosphorus field-effect transistors with reduced current fluctuation

Junhong Na, Young Tack Lee, Jung Ah Lim, Do Kyung Hwang, Gyu Tae Kim, Won Kook Choi, Yong Won Song

Research output: Contribution to journalArticlepeer-review

267 Citations (Scopus)


We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 passivation on device characteristics, measurements and analyses were conducted on thermally annealed devices before and after the passivation. More specifically, static and low-frequency noise analyses were used in monitoring the charge transport characteristics in the devices. The carrier number fluctuation (CNF) model, which is related to the charge trapping/detrapping process near the interface between the channel and gate dielectric, was employed to describe the current fluctuation phenomena. Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values Dit and Nit, extracted from the subthreshold slope (SS) and the CNF model, respectively. The deviations between the interface trap density values extracted using the SS value and CNF model are elucidated in terms of the role of the Schottky barrier between the few-layer BP and metal contact. Furthermore, the preservation of the Al2O3-passivated few-layer BP flakes in ambient air for two months was confirmed by identical Raman spectra. (Graph Presented).

Original languageEnglish
Pages (from-to)11753-11762
Number of pages10
JournalACS nano
Issue number11
Publication statusPublished - 2014 Nov 25

Bibliographical note

Publisher Copyright:
© 2014 American Chemical Society.


  • Alo
  • Black phosphorus
  • Low-frequency noise
  • Passivation
  • Phosphorene

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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