Field-controllable exchange bias in epitaxial Fe films grown on GaAs

Seonghoon Choi, Taehee Yoo, S. Khym, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of the planar Hall resistance at 3K. The value of the unidirectional magnetic anisotropy corresponding to such field-controllable exchange is obtained from the angular dependence of the planar Hall effect.

Original languageEnglish
Article number132403
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2012 Sept 24

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244); by the National Research Foundation of Korea (NRF) grant funded by the Government of Korea (MEST) (No. 2010-0025880); and by the National Science Foundation Grant No. DMR10-05851.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Field-controllable exchange bias in epitaxial Fe films grown on GaAs'. Together they form a unique fingerprint.

Cite this