Field electron emission of boron nitride nanotube emitters

Ki Nam Yun; Guillaume Leti; Jun Soo Han; Cheol Jin Lee; Yoon Ho Song

doi:10.1109/IVNC.2016.7551454

Field electron emission of boron nitride nanotube emitters

Ki Nam Yun, Guillaume Leti, Jun Soo Han, Cheol Jin Lee, Yoon Ho Song

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Field emission properties of boron nitride (BN) nanomaterials have been studied for years to apply it at harsh ambient condition. However, the field emitters fabricated using the BN nanomaterials have limitations to utilize it as field emission devices due to their poor emission performances. Here, we report much enhanced field emission properties of the BN nanomaterial with low turn-on electric field, high emission current density, and long term emission stability.

Original language	English
Title of host publication	2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509024193
DOIs	https://doi.org/10.1109/IVNC.2016.7551454
Publication status	Published - 2016 Aug 24
Event	29th International Vacuum Nanoelectronics Conference, IVNC 2016 - Vancouver, Canada Duration: 2016 Jul 11 → 2016 Jul 15

Publication series

Name	2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

Other

Other	29th International Vacuum Nanoelectronics Conference, IVNC 2016
Country/Territory	Canada
City	Vancouver
Period	16/7/11 → 16/7/15

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

Keywords

Boron nitride nanotubes
Field emission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/IVNC.2016.7551454

Cite this

Yun, K. N., Leti, G., Han, J. S., Lee, C. J., & Song, Y. H. (2016). Field electron emission of boron nitride nanotube emitters. In 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016 Article 7551454 (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2016.7551454

Field electron emission of boron nitride nanotube emitters. / Yun, Ki Nam; Leti, Guillaume; Han, Jun Soo et al.
2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7551454 (2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yun, KN, Leti, G, Han, JS, Lee, CJ & Song, YH 2016, Field electron emission of boron nitride nanotube emitters. in 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016., 7551454, 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016, Institute of Electrical and Electronics Engineers Inc., 29th International Vacuum Nanoelectronics Conference, IVNC 2016, Vancouver, Canada, 16/7/11. https://doi.org/10.1109/IVNC.2016.7551454

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title = "Field electron emission of boron nitride nanotube emitters",

abstract = "Field emission properties of boron nitride (BN) nanomaterials have been studied for years to apply it at harsh ambient condition. However, the field emitters fabricated using the BN nanomaterials have limitations to utilize it as field emission devices due to their poor emission performances. Here, we report much enhanced field emission properties of the BN nanomaterial with low turn-on electric field, high emission current density, and long term emission stability.",

keywords = "Boron nitride nanotubes, Field emission",

author = "Yun, {Ki Nam} and Guillaume Leti and Han, {Jun Soo} and Lee, {Cheol Jin} and Song, {Yoon Ho}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 29th International Vacuum Nanoelectronics Conference, IVNC 2016 ; Conference date: 11-07-2016 Through 15-07-2016",

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Y1 - 2016/8/24

N2 - Field emission properties of boron nitride (BN) nanomaterials have been studied for years to apply it at harsh ambient condition. However, the field emitters fabricated using the BN nanomaterials have limitations to utilize it as field emission devices due to their poor emission performances. Here, we report much enhanced field emission properties of the BN nanomaterial with low turn-on electric field, high emission current density, and long term emission stability.

AB - Field emission properties of boron nitride (BN) nanomaterials have been studied for years to apply it at harsh ambient condition. However, the field emitters fabricated using the BN nanomaterials have limitations to utilize it as field emission devices due to their poor emission performances. Here, we report much enhanced field emission properties of the BN nanomaterial with low turn-on electric field, high emission current density, and long term emission stability.

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BT - 2016 29th International Vacuum Nanoelectronics Conference, IVNC 2016

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ER -

Field electron emission of boron nitride nanotube emitters

Abstract

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Keywords

ASJC Scopus subject areas

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