Abstract
Amorphous carbon (a-C) films and cesiated a-C films were synthesized on silicon substrate by Cs ion gun sputter deposition system (Cs IGSDS). The properties of a-C film were analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy, As the negative carbon ion energy increased, relative sp3 ratio in the a-C film increased, and surface roughness decreased. The field emission characteristics of the a-C films as a function of negative carbon ion energy were examined by diode type I-V measurement at ultra high vacuum system. From I-V measurements, the threshold voltage increased with the increase of negative carbon ion energy, and the range from 11 to 16 V/μm was obtained. To investigate the Cs effect, cesiated a-C films were prepared by Cs+ ion and C- ion co-deposition and field emission characteristics of the cesiated a-C films were observed, too. Compared to non-cesiated a-C films, the threshold voltage is decreased by the Cs co-deposition and the value was about 6 V/μm. In this study, we investigate that the relation between carbon ion energy and field emission, and the effect of Cs in the a-C films were examined.
| Original language | English |
|---|---|
| Pages (from-to) | 199-204 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 355 |
| DOIs | |
| Publication status | Published - 1999 Nov 1 |
| Externally published | Yes |
| Event | Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: 1999 Apr 12 → 1999 Apr 15 |
Bibliographical note
Funding Information:This study was supported by the University-Industry Collaborative Research Grants of the Korea Science and Engineering Foundation, Republic of Korea under contract 97-2-06-03-01-2
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry