Field emission from boron nitride nanotubes

Yenan Song; Dong Hoon Shin; Yuning Sun; Cheol Jin Lee; Yoon Ho Lee

doi:10.1109/IVNC.2013.6624748

Field emission from boron nitride nanotubes

Yenan Song, Dong Hoon Shin, Yuning Sun, Cheol Jin Lee, Yoon Ho Lee

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Boron nitride (BN) nanomaterials have excellent electrical, chemical and mechanical properties, such as high thermal conductivity, resistant to oxidation, chemical inertness, and negative electron affinity. These unique features make BN a promising cold electron emission material. In this work, we investigated on the field emission properties from BN nanotubes (BNNTs), among the various BN allotropes. BNNT is a tubular structured material like a carbon nanotube. The BN nanomaterial based field emitters were fabricated by a screen printing method. The screen printed BN emitters performed good field emission properties that presented good long-term stability and a high emission current. The detail field emission properties will be discussed.

Original language	English
Title of host publication	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
DOIs	https://doi.org/10.1109/IVNC.2013.6624748
Publication status	Published - 2013
Event	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 - Roanoke, VA, United States Duration: 2013 Jul 8 → 2013 Jul 12

Publication series

Name	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Other

Other	2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013
Country/Territory	United States
City	Roanoke, VA
Period	13/7/8 → 13/7/12

Keywords

Boron nitride nanotubes
Field emission
Screen printing

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2013.6624748

Cite this

Song, Y, Shin, DH, Sun, Y, Lee, CJ & Lee, YH 2013, Field emission from boron nitride nanotubes. in 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013., 6624748, 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013, 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013, Roanoke, VA, United States, 13/7/8. https://doi.org/10.1109/IVNC.2013.6624748

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title = "Field emission from boron nitride nanotubes",

abstract = "Boron nitride (BN) nanomaterials have excellent electrical, chemical and mechanical properties, such as high thermal conductivity, resistant to oxidation, chemical inertness, and negative electron affinity. These unique features make BN a promising cold electron emission material. In this work, we investigated on the field emission properties from BN nanotubes (BNNTs), among the various BN allotropes. BNNT is a tubular structured material like a carbon nanotube. The BN nanomaterial based field emitters were fabricated by a screen printing method. The screen printed BN emitters performed good field emission properties that presented good long-term stability and a high emission current. The detail field emission properties will be discussed.",

keywords = "Boron nitride nanotubes, Field emission, Screen printing",

author = "Yenan Song and Shin, {Dong Hoon} and Yuning Sun and Lee, {Cheol Jin} and Lee, {Yoon Ho}",

year = "2013",

doi = "10.1109/IVNC.2013.6624748",

language = "English",

isbn = "9781467359931",

series = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013",

booktitle = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013",

note = "2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013 ; Conference date: 08-07-2013 Through 12-07-2013",

}

TY - GEN

T1 - Field emission from boron nitride nanotubes

AU - Song, Yenan

AU - Shin, Dong Hoon

AU - Sun, Yuning

AU - Lee, Cheol Jin

AU - Lee, Yoon Ho

PY - 2013

Y1 - 2013

N2 - Boron nitride (BN) nanomaterials have excellent electrical, chemical and mechanical properties, such as high thermal conductivity, resistant to oxidation, chemical inertness, and negative electron affinity. These unique features make BN a promising cold electron emission material. In this work, we investigated on the field emission properties from BN nanotubes (BNNTs), among the various BN allotropes. BNNT is a tubular structured material like a carbon nanotube. The BN nanomaterial based field emitters were fabricated by a screen printing method. The screen printed BN emitters performed good field emission properties that presented good long-term stability and a high emission current. The detail field emission properties will be discussed.

AB - Boron nitride (BN) nanomaterials have excellent electrical, chemical and mechanical properties, such as high thermal conductivity, resistant to oxidation, chemical inertness, and negative electron affinity. These unique features make BN a promising cold electron emission material. In this work, we investigated on the field emission properties from BN nanotubes (BNNTs), among the various BN allotropes. BNNT is a tubular structured material like a carbon nanotube. The BN nanomaterial based field emitters were fabricated by a screen printing method. The screen printed BN emitters performed good field emission properties that presented good long-term stability and a high emission current. The detail field emission properties will be discussed.

KW - Boron nitride nanotubes

KW - Field emission

KW - Screen printing

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DO - 10.1109/IVNC.2013.6624748

M3 - Conference contribution

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SN - 9781467359931

T3 - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

BT - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

T2 - 2013 26th International Vacuum Nanoelectronics Conference, IVNC 2013

Y2 - 8 July 2013 through 12 July 2013

ER -

Field emission from boron nitride nanotubes

Abstract

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Other

Keywords

ASJC Scopus subject areas

Access to Document

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