Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee; T. J. Lee; S. C. Lyu; Y. Zhang; H. Ruh; H. J. Lee

doi:10.1063/1.1518810

Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee

Research output: Contribution to journal › Article › peer-review

1180 Citations (Scopus)

Abstract

Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm². The emission current density from the ZnO nanowires reached 1mA/cm² at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

Original language	English
Pages (from-to)	3648-3650
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1518810
Publication status	Published - 2002 Nov 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1518810

Cite this

@article{04ee8cf3e5b44f90ac44bf3a0cadda52,

title = "Field emission from well-aligned zinc oxide nanowires grown at low temperature",

abstract = "Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.",

author = "Lee, {C. J.} and Lee, {T. J.} and Lyu, {S. C.} and Y. Zhang and H. Ruh and Lee, {H. J.}",

year = "2002",

month = nov,

day = "4",

doi = "10.1063/1.1518810",

language = "English",

volume = "81",

pages = "3648--3650",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Field emission from well-aligned zinc oxide nanowires grown at low temperature

AU - Lee, C. J.

AU - Lee, T. J.

AU - Lyu, S. C.

AU - Zhang, Y.

AU - Ruh, H.

AU - Lee, H. J.

PY - 2002/11/4

Y1 - 2002/11/4

N2 - Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

AB - Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

UR - http://www.scopus.com/inward/record.url?scp=79956010166&partnerID=8YFLogxK

U2 - 10.1063/1.1518810

DO - 10.1063/1.1518810

M3 - Article

AN - SCOPUS:79956010166

SN - 0003-6951

VL - 81

SP - 3648

EP - 3650

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Field emission from well-aligned zinc oxide nanowires grown at low temperature

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this