Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee; T. J. Lee; S. C. Lyu; Y. Zhang; H. Ruh; H. J. Lee

doi:10.1063/1.1518810

Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee

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Abstract

Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm². The emission current density from the ZnO nanowires reached 1mA/cm² at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

Original language	English
Pages (from-to)	3648-3650
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	19
DOIs	https://doi.org/10.1063/1.1518810
Publication status	Published - 2002 Nov 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Field emission from well-aligned zinc oxide nanowires grown at low temperature",

abstract = "Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.",

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T1 - Field emission from well-aligned zinc oxide nanowires grown at low temperature

AU - Lee, C. J.

AU - Lee, T. J.

AU - Lyu, S. C.

AU - Zhang, Y.

AU - Ruh, H.

AU - Lee, H. J.

PY - 2002/11/4

Y1 - 2002/11/4

N2 - Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

AB - Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

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Field emission from well-aligned zinc oxide nanowires grown at low temperature

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