Field emission performance of boron nitride nanotube emitters according to vacuum pressure

Ki Nam Yun; Jin Woo Jeong; Jun Tae Kang; Sora Park; Jae Woo Kim; Yoon Ho Song; Jun Soo Han; Cheol Jin Lee

doi:10.1109/IVNC.2018.8520167

Field emission performance of boron nitride nanotube emitters according to vacuum pressure

Ki Nam Yun, Jin Woo Jeong, Jun Tae Kang, Sora Park, Jae Woo Kim, Yoon Ho Song, Jun Soo Han, Cheol Jin Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10^-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10^-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.

Original language	English
Title of host publication	2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538657171
DOIs	https://doi.org/10.1109/IVNC.2018.8520167
Publication status	Published - 2018 Nov 1
Event	31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan Duration: 2018 Jul 9 → 2018 Jul 13

Publication series

Name	2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018

Other

Other	31st International Vacuum Nanoelectronics Conference, IVNC 2018
Country/Territory	Japan
City	Kyoto
Period	18/7/9 → 18/7/13

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by the Ministry of Science and ICT & the Ministry of Trade, Industry and Energy, Korea, through NRF (2015M3A9E2066999, 2017M2A2A6A020705 21), Nano-Convergence 2020 project (R201602910), and ETRI R&D program (18ZB1260).

Keywords

Boron nitride nanotube
cold cathode
field emitter
film emitter

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IVNC.2018.8520167

Cite this

Yun, K. N., Jeong, J. W., Kang, J. T., Park, S., Kim, J. W., Song, Y. H., Han, J. S., & Lee, C. J. (2018). Field emission performance of boron nitride nanotube emitters according to vacuum pressure. In 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018 Article 8520167 (2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2018.8520167

Field emission performance of boron nitride nanotube emitters according to vacuum pressure. / Yun, Ki Nam; Jeong, Jin Woo; Kang, Jun Tae et al.
2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8520167 (2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yun, KN, Jeong, JW, Kang, JT, Park, S, Kim, JW, Song, YH, Han, JS & Lee, CJ 2018, Field emission performance of boron nitride nanotube emitters according to vacuum pressure. in 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018., 8520167, 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018, Institute of Electrical and Electronics Engineers Inc., 31st International Vacuum Nanoelectronics Conference, IVNC 2018, Kyoto, Japan, 18/7/9. https://doi.org/10.1109/IVNC.2018.8520167

Yun KN, Jeong JW, Kang JT, Park S, Kim JW, Song YH et al. Field emission performance of boron nitride nanotube emitters according to vacuum pressure. In 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8520167. (2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018). doi: 10.1109/IVNC.2018.8520167

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abstract = "Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.",

keywords = "Boron nitride nanotube, cold cathode, field emitter, film emitter",

author = "Yun, {Ki Nam} and Jeong, {Jin Woo} and Kang, {Jun Tae} and Sora Park and Kim, {Jae Woo} and Song, {Yoon Ho} and Han, {Jun Soo} and Lee, {Cheol Jin}",

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AU - Song, Yoon Ho

AU - Han, Jun Soo

AU - Lee, Cheol Jin

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by the Ministry of Science and ICT & the Ministry of Trade, Industry and Energy, Korea, through NRF (2015M3A9E2066999, 2017M2A2A6A020705 21), Nano-Convergence 2020 project (R201602910), and ETRI R&D program (18ZB1260).

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.

AB - Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.

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KW - cold cathode

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KW - film emitter

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Field emission performance of boron nitride nanotube emitters according to vacuum pressure

Abstract

Publication series

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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