Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide

Byeong Kwon Ju; Heung Woo Park; Yun-Hi Lee; In Jae Chung; M. R. Haskard; Jung Ho Park; Myung Hwan Oh

Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide

Byeong Kwon Ju, Heung Woo Park, Yun-Hi Lee, In Jae Chung, M. R. Haskard, Jung Ho Park, Myung Hwan Oh

Research output: Contribution to conference › Paper › peer-review

Abstract

Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

Original language	English
Pages	221-225
Number of pages	5
Publication status	Published - 1996
Event	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12

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Other	Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
City	St.Petersburg, Russia
Period	96/7/7 → 96/7/12

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

@conference{c1e1e2d088ff4bbfb4ccd300512130d2,

title = "Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide",

abstract = "Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.",

author = "Ju, {Byeong Kwon} and Park, {Heung Woo} and Yun-Hi Lee and Chung, {In Jae} and Haskard, {M. R.} and Park, {Jung Ho} and Oh, {Myung Hwan}",

year = "1996",

language = "English",

pages = "221--225",

note = "Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC ; Conference date: 07-07-1996 Through 12-07-1996",

}

TY - CONF

T1 - Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide

AU - Ju, Byeong Kwon

AU - Park, Heung Woo

AU - Lee, Yun-Hi

AU - Chung, In Jae

AU - Haskard, M. R.

AU - Park, Jung Ho

AU - Oh, Myung Hwan

PY - 1996

Y1 - 1996

N2 - Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

AB - Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35 V and maximum current was 1 mA, while turn-on voltage of the coated tip was 15 V and maximum current was 6 mA. While uncoated silicon tip was destroyed after 13 minutes after operation and showed rapid lowering of emission current, coated tip showed stable emission characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies.

UR - http://www.scopus.com/inward/record.url?scp=0030349544&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030349544

SP - 221

EP - 225

T2 - Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC

Y2 - 7 July 1996 through 12 July 1996

ER -

Field emission properties of Mo-coated Si field emitter arrays and formation of Molybdenum silicide

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