Abstract
We have studied the electron emission characteristics of tetrahedral amorphous carbon (ta-C) films with different nitrogen content. With increasing N content in ta-C, the room temperature conductivity as well as the emission current decreases and then increases, resulting in minima. The Fermi-level shifts toward the conduction band and thus the work function decreases by N doping in ta-C, however the emission currents of doped ta-C films are less than those of undoped ta-C.
| Original language | English |
|---|---|
| Pages | 298-302 |
| Number of pages | 5 |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
| Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
|---|---|
| City | St.Petersburg, Russia |
| Period | 96/7/7 → 96/7/12 |
ASJC Scopus subject areas
- Surfaces and Interfaces
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