Fine luminescent patterning on ZnO nanowires and films using focused electron-beam irradiation

Dong Il Kim, Young Ki Hong, Suk Ho Lee, Jeongyong Kim, Jinsoo Joo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


ZnO thin films and nanowires (NWs) were precisely treated by focused electron-beam (E-beam) irradiation with a line width between 200 nm and 3 μm. For both ZnO films and NWs, an increased green emission was clearly observed for the E-beam-treated parts. Using a high-resolution laser confocal microscope, the photoluminescence intensities for E-beam-treated ZnO structures increased with increasing dose 1.0 × 1017-1.0 × 1018 electrons/cm2. The resistivity of a single ZnO NW increased from 56 to 1800 Ω cm after the E-beam treatment. From the results for the annealed ZnO thin films, we analyzed that the variations in PL and resistivity were due to the formation of vacancies upon focused E-beam irradiation.

Original languageEnglish
Pages (from-to)1228-1233
Number of pages6
JournalCurrent Applied Physics
Issue number9
Publication statusPublished - 2014 Sept

Bibliographical note

Funding Information:
We acknowledge the financial support from National Research Foundation (NRF) grants funded by the Korean Government (The Ministry of Science, ICT and Future Planning (MSIP)) (No. 2012R1A2A2A01045102 and No. 2012R1A1A2A10043220 ). In addition, J. Kim would like to acknowledge financial support received from the Institute for Basic Science (IBS) (EM 1304 ) in Korea.

Copyright 2020 Elsevier B.V., All rights reserved.


  • Electron irradiation
  • Focused electron beam
  • Nanowire
  • Photoluminescence
  • ZnO

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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