Abstract
Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 1012 Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 15709-15717 |
| Number of pages | 9 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 17 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2025 Mar 12 |
Bibliographical note
Publisher Copyright:© 2025 American Chemical Society.
Keywords
- fingerprint sensor
- organic photodetectors
- photomultiplication
- readout circuit
- silicon thin-film transistor
ASJC Scopus subject areas
- General Materials Science
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