Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4-300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift approximately 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.
|Number of pages
|Physica E: Low-Dimensional Systems and Nanostructures
|Published - 2000 May
|MSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 12 → 1999 Jul 16
Bibliographical noteFunding Information:
This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) and was performed partially under the management of the Femtosecond Technology Research Association (FESTA). The authors are grateful to Drs. H. Yajima, M. Watanabe, M. Shimizu, T. Sakamoto, Y. Sugiyama at ETL, and Dr. K. Asakawa at FESTA in Japan for their encouragement.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics