Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min Kyu Joo, Mireille Mouis, Dae Young Jeon, Sylvain Barraud, So Jeong Park, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (μ0-acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (μB) and μ0-acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of μB and μ0-acc with gate length in planar and tri-gate nanowire JLTs.

Original languageEnglish
Article number045024
JournalSemiconductor Science and Technology
Issue number4
Publication statusPublished - 2014 Apr


  • flat-band voltage
  • junctionless transistors
  • low-field mobility
  • neutral defects scattering
  • threshold voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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