Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min Kyu Joo; Mireille Mouis; Dae Young Jeon; Sylvain Barraud; So Jeong Park; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1088/0268-1242/29/4/045024

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min Kyu Joo, Mireille Mouis, Dae Young Jeon, Sylvain Barraud, So Jeong Park, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper presents the low-temperature characteristics of flat-band (V_FB) and low-field mobility in accumulation regime (μ_0-acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate V_FB. Additionally, the gate oxide capacitance per unit area C_ox and the doping concentration N_D were evaluated as well. Accounting for the position of V_FB and the charge based analytical model of JLTs, bulk mobility (μ_B) and μ_0-acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of μ_B and μ_0-acc with gate length in planar and tri-gate nanowire JLTs.

Original language	English
Article number	045024
Journal	Semiconductor Science and Technology
Volume	29
Issue number	4
DOIs	https://doi.org/10.1088/0268-1242/29/4/045024
Publication status	Published - 2014 Apr

Keywords

flat-band voltage
junctionless transistors
low-field mobility
neutral defects scattering
threshold voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/29/4/045024

Cite this

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title = "Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature",

abstract = "This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (μ0-acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (μB) and μ0-acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of μB and μ0-acc with gate length in planar and tri-gate nanowire JLTs.",

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author = "Joo, {Min Kyu} and Mireille Mouis and Jeon, {Dae Young} and Sylvain Barraud and Park, {So Jeong} and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

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AU - Joo, Min Kyu

AU - Mouis, Mireille

AU - Jeon, Dae Young

AU - Barraud, Sylvain

AU - Park, So Jeong

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

PY - 2014/4

Y1 - 2014/4

N2 - This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (μ0-acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (μB) and μ0-acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of μB and μ0-acc with gate length in planar and tri-gate nanowire JLTs.

AB - This paper presents the low-temperature characteristics of flat-band (VFB) and low-field mobility in accumulation regime (μ0-acc) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate VFB. Additionally, the gate oxide capacitance per unit area Cox and the doping concentration ND were evaluated as well. Accounting for the position of VFB and the charge based analytical model of JLTs, bulk mobility (μB) and μ0-acc were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of μB and μ0-acc with gate length in planar and tri-gate nanowire JLTs.

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KW - low-field mobility

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Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Abstract

Keywords

ASJC Scopus subject areas

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