Keyphrases
Accumulation Regime
25%
Analytical Model
25%
Bulk Mobility
25%
Capacitance
25%
Charge-based
25%
Conduction Regime
25%
Coupled Temperature
25%
Doping Concentration
25%
Dual Gate
25%
Flat Band
25%
Flat-band Voltage
100%
Gate Coupling
25%
Gate Length
25%
Gate Oxide
25%
Junctionless Transistor
100%
Low Temperature
100%
Low Temperature Measurements
25%
Low-field Mobility
100%
Low-temperature Characteristics
25%
Mobility Analysis
100%
Nanowires
25%
Oxide Capacitance
25%
Planar Gate
25%
Surface Conduction
25%
Tri-gate
25%
Volume Conduction
25%
Engineering
Analytical Model
33%
Capacitance Per Unit Area
33%
Gate Length
33%
Gate Oxide
33%
Limiting Factor
33%
Low-Temperature
100%
Nanowire
33%
Material Science
Capacitance
50%
Nanowire
25%
Oxide Compound
25%
Surface (Surface Science)
25%
Transistor
100%