Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors

Junggwon Yun, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Complementary NAND and NOR gates composed of p-channel HgTe-nanocrystal (NC) films and n-channel HgSe-NC films were constructed on back-gate patterned plastic substrates. The NAND gate was made of two HgTe-p-channel thin film transistors (TFTs) in parallel and two HgSe-n-channel TFTs in series. The NOR gate was built up with both two HgSe-n-channel TFTs in parallel and two HgTe-p-channel TFTs in series. The mobility and on/off ratio for the p-channel TFTs were estimated to be 0.9 cm2 V-1 s-1 and 10, respectively, and those for the n-channel TFTs were measured to be 1.8 cm2 V-1 s-1 and 102, respectively. The NAND and NOR gates were operated with gains of 1.45 and 1.63 and transition widths of 7.8 and 6.2 V, respectively, at room temperature in air. In addition, the operations of the NAND and NOR logics are reproducible for up to 1000 strain cycles.

Original languageEnglish
Article number235204
Issue number23
Publication statusPublished - 2010 Jun 11

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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