High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (∼3300cm2V - 1s- 1), large Ion/Ioff ratio (∼108) and small subthreshold swing (∼70mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.
|Publication status||Published - 2011 Nov 18|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering