Flexible logic gates composed of Si-nanowire-based memristive switches

Taeho Moon, Ji Chul Jung, Yong Han, Youngin Jeon, Sang Mo Koo, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

Original languageEnglish
Article number6332494
Pages (from-to)3288-3291
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume59
Issue number12
DOIs
Publication statusPublished - 2012

Bibliographical note

Funding Information:
Manuscript received June 13, 2012; accepted September 19, 2012. Date of publication October 18, 2012; date of current version November 16, 2012. This work was supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World Class University of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Hynix–Korea University Nano-Semiconductor Program, by the National Research Foundation under Grant 2011-0003289, and by a research grant from Kwangwoon University in 2012. The review of this paper was arranged by Editor W. Tsai.

Keywords

  • Flexible electronics
  • Si nanowire (NW)
  • logic gate
  • memristive switches
  • top-down approach

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Flexible logic gates composed of Si-nanowire-based memristive switches'. Together they form a unique fingerprint.

Cite this