Flexible logic gates composed of Si-nanowire-based memristive switches

Taeho Moon; Ji Chul Jung; Yong Han; Youngin Jeon; Sang Mo Koo; Sangsig Kim

doi:10.1109/TED.2012.2220778

Flexible logic gates composed of Si-nanowire-based memristive switches

Taeho Moon, Ji Chul Jung, Yong Han, Youngin Jeon, Sang Mo Koo, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

Original language	English
Article number	6332494
Pages (from-to)	3288-3291
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	12
DOIs	https://doi.org/10.1109/TED.2012.2220778
Publication status	Published - 2012

Keywords

Flexible electronics
Si nanowire (NW)
logic gate
memristive switches
top-down approach

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2220778

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title = "Flexible logic gates composed of Si-nanowire-based memristive switches",

abstract = "The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.",

keywords = "Flexible electronics, Si nanowire (NW), logic gate, memristive switches, top-down approach",

author = "Taeho Moon and Jung, {Ji Chul} and Yong Han and Youngin Jeon and Koo, {Sang Mo} and Sangsig Kim",

note = "Funding Information: Manuscript received June 13, 2012; accepted September 19, 2012. Date of publication October 18, 2012; date of current version November 16, 2012. This work was supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World Class University of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Hynix–Korea University Nano-Semiconductor Program, by the National Research Foundation under Grant 2011-0003289, and by a research grant from Kwangwoon University in 2012. The review of this paper was arranged by Editor W. Tsai.",

year = "2012",

doi = "10.1109/TED.2012.2220778",

language = "English",

volume = "59",

pages = "3288--3291",

journal = "IEEE Transactions on Electron Devices",

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AU - Moon, Taeho

AU - Jung, Ji Chul

AU - Han, Yong

AU - Jeon, Youngin

AU - Koo, Sang Mo

AU - Kim, Sangsig

N1 - Funding Information: Manuscript received June 13, 2012; accepted September 19, 2012. Date of publication October 18, 2012; date of current version November 16, 2012. This work was supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World Class University of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Hynix–Korea University Nano-Semiconductor Program, by the National Research Foundation under Grant 2011-0003289, and by a research grant from Kwangwoon University in 2012. The review of this paper was arranged by Editor W. Tsai.

PY - 2012

Y1 - 2012

N2 - The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

AB - The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.

KW - Flexible electronics

KW - Si nanowire (NW)

KW - logic gate

KW - memristive switches

KW - top-down approach

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Flexible logic gates composed of Si-nanowire-based memristive switches

Abstract

Keywords

ASJC Scopus subject areas

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