Abstract
The flexible logic circuit configured using Si-based memristive switches is demonstrated. The memristive switches consisting of Ag/a-Si/heavily doped ;p;-type Si are constructed on plastic using top-down-fabricated Si nanowires. The logic gate analyses provide insight toward logic circuits having multifunctionality and high connectivity through a crossbar-array architecture. With the strong stability of the logic performances against external strain, the memristive switch looks promising as a building block for flexible electronics.
Original language | English |
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Article number | 6332494 |
Pages (from-to) | 3288-3291 |
Number of pages | 4 |
Journal | IEEE Transactions on Electron Devices |
Volume | 59 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2012 |
Keywords
- Flexible electronics
- Si nanowire (NW)
- logic gate
- memristive switches
- top-down approach
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering