Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon, Myeongwon Lee, Taeho Moon, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

Original languageEnglish
Article number6294439
Pages (from-to)2939-2942
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2012

Bibliographical note

Funding Information:
Manuscript received May 2, 2012; revised July 1, 2012; accepted July 31, 2012. Date of publication September 4, 2012; date of current version October 18, 2012. This work was partly supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World-Class University Project of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Seoul R&BD Program under Grant PA090914, and by the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). The review of this paper was arranged by Editor G. Jeong.


  • Field-effect transistor (FET)
  • Pt
  • memory
  • nanocrystal (NC)
  • nonvolatile
  • plastic substrate
  • silicon-nanowire (Si-NW) array
  • top-down approach

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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