Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon; Myeongwon Lee; Taeho Moon; Sangsig Kim

doi:10.1109/TED.2012.2211879

Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Youngin Jeon, Myeongwon Lee, Taeho Moon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n ⁺-p-n ⁺ Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 ⁷ and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 ⁴s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.

Original language	English
Article number	6294439
Pages (from-to)	2939-2942
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	11
DOIs	https://doi.org/10.1109/TED.2012.2211879
Publication status	Published - 2012

Bibliographical note

Funding Information:
Manuscript received May 2, 2012; revised July 1, 2012; accepted July 31, 2012. Date of publication September 4, 2012; date of current version October 18, 2012. This work was partly supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World-Class University Project of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Seoul R&BD Program under Grant PA090914, and by the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). The review of this paper was arranged by Editor G. Jeong.

Keywords

Field-effect transistor (FET)
Pt
memory
nanocrystal (NC)
nonvolatile
plastic substrate
silicon-nanowire (Si-NW) array
top-down approach

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2012.2211879

Cite this

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title = "Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires",

abstract = "The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n +-p-n + Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an on-current/off-current ratio of 10 7 and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to 10 4s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.",

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note = "Funding Information: Manuscript received May 2, 2012; revised July 1, 2012; accepted July 31, 2012. Date of publication September 4, 2012; date of current version October 18, 2012. This work was partly supported by the Nano R&D Program under Grant M10703000980-08M0300-98010, by the World-Class University Project of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) under Grant R32-2008-000-10082-0, by the Seoul R&BD Program under Grant PA090914, and by the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). The review of this paper was arranged by Editor G. Jeong.",

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Flexible nano-floating-gate memory with channels of enhancement-mode Si nanowires

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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