We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.
Bibliographical noteFunding Information:
This research was also supported by the National Research Foundation of Korea ( 2013M3C1A3059590 and 2012R1A1A1042630 ) and partially supported by the Global Leading Technology Program funded by the Ministry of Trade, Industry and Energy, Korea (No. 10042537 ).
© 2014 Elsevier B.V. All rights reserved.
- Flexible circuit
- Hybrid CMOS inverter
- Molybdenum disulfide
- Organic thin-film transistor
- Transition metal dichalcogenide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering