Flexible resistive switching memory devices composed of solution-processed GeO 2:S films

Isaac Chung; Kyoungah Cho; Junggwon Yun; Sangsig Kim

doi:10.1016/j.mee.2012.05.032

Flexible resistive switching memory devices composed of solution-processed GeO ₂:S films

Isaac Chung, Kyoungah Cho, Junggwon Yun, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO ₂ (GeO ₂:S) on flexible substrates. The Al/GeO ₂:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 ⁷ and the memory characteristics are retained after 10 ⁴ s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 ³ cycles.

Original language	English
Pages (from-to)	122-125
Number of pages	4
Journal	Microelectronic Engineering
Volume	97
DOIs	https://doi.org/10.1016/j.mee.2012.05.032
Publication status	Published - 2012 Sept

Keywords

Doped GeO
Flexible memories
ReRAM
Unipolar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2012.05.032

Cite this

@article{b6f82beaa1a544a0b1e681d774c84a91,

title = "Flexible resistive switching memory devices composed of solution-processed GeO 2:S films",

abstract = "In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO 2 (GeO 2:S) on flexible substrates. The Al/GeO 2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 7 and the memory characteristics are retained after 10 4 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 3 cycles.",

keywords = "Doped GeO, Flexible memories, ReRAM, Unipolar",

author = "Isaac Chung and Kyoungah Cho and Junggwon Yun and Sangsig Kim",

note = "Funding Information: This work was supported by the Nano R&D Program (M10703000980-08M0300-98010), the World Class University Project (WCU, R32-2008-000-10082-0) of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) , the Hynix-Korea University Nano-Semiconductor Program, and the Seoul R&BD Program (PA090914).",

year = "2012",

month = sep,

doi = "10.1016/j.mee.2012.05.032",

language = "English",

volume = "97",

pages = "122--125",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

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T1 - Flexible resistive switching memory devices composed of solution-processed GeO 2:S films

AU - Chung, Isaac

AU - Cho, Kyoungah

AU - Yun, Junggwon

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the Nano R&D Program (M10703000980-08M0300-98010), the World Class University Project (WCU, R32-2008-000-10082-0) of the Ministry of Education, Science, and Technology (Korea Science and Engineering Foundation) , the Hynix-Korea University Nano-Semiconductor Program, and the Seoul R&BD Program (PA090914).

PY - 2012/9

Y1 - 2012/9

N2 - In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO 2 (GeO 2:S) on flexible substrates. The Al/GeO 2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 7 and the memory characteristics are retained after 10 4 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 3 cycles.

AB - In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO 2 (GeO 2:S) on flexible substrates. The Al/GeO 2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 7 and the memory characteristics are retained after 10 4 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 3 cycles.

KW - Doped GeO

KW - Flexible memories

KW - ReRAM

KW - Unipolar

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