Abstract
In this study, resistive random access memory (ReRAM) devices are fabricated using solution-processable sulfur-doped GeO 2 (GeO 2:S) on flexible substrates. The Al/GeO 2:S/Au ReRAM devices exhibit the unipolar resistive switching behavior with an on/off ratio of more than 10 7 and the memory characteristics are retained after 10 4 s. The memory characteristics are unaffected by strains, even after the continuous substrate bending test for 10 3 cycles.
Original language | English |
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Pages (from-to) | 122-125 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 97 |
DOIs | |
Publication status | Published - 2012 Sept |
Keywords
- Doped GeO
- Flexible memories
- ReRAM
- Unipolar
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering