Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °c

J. Y. Choi; S. Kim; B. U. Hwang; N. E. Lee; S. Y. Lee

doi:10.1088/0268-1242/31/12/125007

Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °c

J. Y. Choi, S. Kim, B. U. Hwang, N. E. Lee, S. Y. Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al₂O₃. To improve the mechanical stability, Al₂O₃ has been used as a buffer layer on the flexible substrate. The Al₂O₃ layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.

Original language	English
Article number	125007
Journal	Semiconductor Science and Technology
Volume	31
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/31/12/125007
Publication status	Published - 2016 Nov 10

Bibliographical note

Funding Information:
This work has been supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MEST) (No. NRF-2013R1A2A2A03069155) and the Sensitivity touch platform development and new industrialization support program through the Ministry of Trade, Industry & Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT).

Publisher Copyright:
© 2016 IOP Publishing Ltd.

Keywords

SiInZnO
hybrid gate dielectric
semiconductor
thin film transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/31/12/125007

Cite this

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title = "Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °c",

abstract = "Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.",

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author = "Choi, {J. Y.} and S. Kim and Hwang, {B. U.} and Lee, {N. E.} and Lee, {S. Y.}",

note = "Funding Information: This work has been supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MEST) (No. NRF-2013R1A2A2A03069155) and the Sensitivity touch platform development and new industrialization support program through the Ministry of Trade, Industry & Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT). Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

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AU - Choi, J. Y.

AU - Kim, S.

AU - Hwang, B. U.

AU - Lee, N. E.

AU - Lee, S. Y.

N1 - Funding Information: This work has been supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MEST) (No. NRF-2013R1A2A2A03069155) and the Sensitivity touch platform development and new industrialization support program through the Ministry of Trade, Industry & Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT). Publisher Copyright: © 2016 IOP Publishing Ltd.

PY - 2016/11/10

Y1 - 2016/11/10

N2 - Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.

AB - Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.

KW - SiInZnO

KW - hybrid gate dielectric

KW - semiconductor

KW - thin film transistor

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SN - 0268-1242

VL - 31

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 12

M1 - 125007

ER -

Flexible SiInZnO thin film transistor with organic/inorganic hybrid gate dielectric processed at 150 °c

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Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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