Silicon indium zinc oxide (SIZO) thin film transistors (TFTs) have been fabricated on a flexible polyimide (PI) substrate by using organic/inorganic hybrid gate dielectrics of poly-4vinyl phenol (PVP) and Al2O3. To improve the mechanical stability, Al2O3 has been used as a buffer layer on the flexible substrate. The Al2O3 layer of hybrid gate dielectrics protected the organic gate dielectric and improved mechanical flexibility. The different surface roughness of the gate dielectrics is investigated. The performance of the device with smooth surface roughness was significantly improved. Finally, the electrical characteristics of the TFTs with hybrid gate dielectrics were measured as well as the promising electrical endurance characteristics at the bending radius of 5 mm.
Bibliographical noteFunding Information:
This work has been supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MEST) (No. NRF-2013R1A2A2A03069155) and the Sensitivity touch platform development and new industrialization support program through the Ministry of Trade, Industry & Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT).
© 2016 IOP Publishing Ltd.
- hybrid gate dielectric
- thin film transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry