Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

Yoonjoong Kim; Youngin Jeon; Sangsig Kim

doi:10.1016/j.mee.2015.04.003

Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

Yoonjoong Kim, Youngin Jeon, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 10⁴ and 1.46 × 10⁵, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

Original language	English
Pages (from-to)	120-123
Number of pages	4
Journal	Microelectronic Engineering
Volume	145
DOIs	https://doi.org/10.1016/j.mee.2015.04.003
Publication status	Published - 2015 Sept 1

Keywords

Flexible
Low-power
Ring oscillator
Silicon-nanowire

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2015.04.003

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title = "Flexible silicon nanowire low-power ring oscillator featuring one-volt operation",

abstract = "In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.",

keywords = "Flexible, Low-power, Ring oscillator, Silicon-nanowire",

author = "Yoonjoong Kim and Youngin Jeon and Sangsig Kim",

note = "Funding Information: This work was supported in part by the Mid-career Researcher Program (NRF-2013R1A2A1A03070750) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

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doi = "10.1016/j.mee.2015.04.003",

language = "English",

volume = "145",

pages = "120--123",

journal = "Microelectronic Engineering",

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T1 - Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

AU - Kim, Yoonjoong

AU - Jeon, Youngin

AU - Kim, Sangsig

N1 - Funding Information: This work was supported in part by the Mid-career Researcher Program (NRF-2013R1A2A1A03070750) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and the KSSRC program (Development of printable integrated circuits based on inorganic semiconductor nanowires). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

AB - In this study, we propose a flexible silicon nanowire (SiNW) low-power ring oscillator, which features 1-V operation. Our flexible ring oscillator is composed of three CMOS inverters with a gain of 70 at a supply voltage of 1 V. p- and n-channel SiNW field-effect transistors (FETs) forming the component inverters exhibit on/off current ratios of 4.36 × 104 and 1.46 × 105, respectively. Our ring oscillator generates a sinusoidal wave with a frequency of ∼6.6 MHz. The frequency and waveform are undistorted under upwardly bent and downwardly bent strain conditions of 0.7%. The good mechanical bendability of the flexible ring oscillator indicates high stability and good fatigue properties.

KW - Flexible

KW - Low-power

KW - Ring oscillator

KW - Silicon-nanowire

UR - http://www.scopus.com/inward/record.url?scp=84926641631&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.04.003

DO - 10.1016/j.mee.2015.04.003

M3 - Article

AN - SCOPUS:84926641631

SN - 0167-9317

VL - 145

SP - 120

EP - 123

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Flexible silicon nanowire low-power ring oscillator featuring one-volt operation

Abstract

Keywords

ASJC Scopus subject areas

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