Floating body effect in partially depleted silicon nanowire transistors and potential capacitor-less one-transistor DRAM applications

Myeongwon Lee; Taeho Moon; Sangsig Kim

doi:10.1109/TNANO.2011.2175942

Floating body effect in partially depleted silicon nanowire transistors and potential capacitor-less one-transistor DRAM applications

Myeongwon Lee, Taeho Moon, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We present a capacitor-less 1T-DRAM cell on SiO$-2$ /Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics.

Original language	English
Article number	6082450
Pages (from-to)	355-359
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2011.2175942
Publication status	Published - 2012 Mar

Bibliographical note

Funding Information:
Manuscript received August 30, 2011; accepted November 2, 2011. Date of publication November 16, 2011; date of current version March 9, 2012. This work was supported in part by the Future-Based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology under Grant 2010-0019197, the World Class University under Grant R32-2008-000-10082-0, the IT R&D program of MKE/KEIT under Grant 10030559 [development of next generation high performance organic/nano materials and printing process technology], the Seoul R&BD Program under Grant PA090914, and the KSSRC program [development of printable integrated circuits based on inorganic semiconductor nanowires]. The review of this paper was arranged by Associate Editor R. Lake.

Keywords

1T-DRAM
Capacitor-less
floating body effect
partially depleted (PD)
silicon nanowire transistor (SNWT)

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2011.2175942

Cite this

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abstract = "We present a capacitor-less 1T-DRAM cell on SiO$-2$ /Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics.",

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Floating body effect in partially depleted silicon nanowire transistors and potential capacitor-less one-transistor DRAM applications

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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