Floating body effect in partially depleted silicon nanowire transistors and potential capacitor-less one-transistor DRAM applications

Myeongwon Lee, Taeho Moon, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We present a capacitor-less 1T-DRAM cell on SiO$-2$ /Si substrates using a silicon nanowire (SiNW) as the channel material. The SiNWs are fabricated by a top-down route that is fully compatible with the current Si-based CMOS technology. Based on the observation of the floating body effect of a partially depleted (PD) silicon nanowire transistor (SNWT), its 1T-DRAM functionality and reliability characteristics are investigated. By virtue of the top-down route providing a printable form of the inverted triangular SiNWs, the PD SNWT 1T-DRAM cell can be applied on insulating plastic substrates for potential applications of flexible electronics.

Original languageEnglish
Article number6082450
Pages (from-to)355-359
Number of pages5
JournalIEEE Transactions on Nanotechnology
Issue number2
Publication statusPublished - 2012 Mar

Bibliographical note

Funding Information:
Manuscript received August 30, 2011; accepted November 2, 2011. Date of publication November 16, 2011; date of current version March 9, 2012. This work was supported in part by the Future-Based Technology Development Program (Nano Fields) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology under Grant 2010-0019197, the World Class University under Grant R32-2008-000-10082-0, the IT R&D program of MKE/KEIT under Grant 10030559 [development of next generation high performance organic/nano materials and printing process technology], the Seoul R&BD Program under Grant PA090914, and the KSSRC program [development of printable integrated circuits based on inorganic semiconductor nanowires]. The review of this paper was arranged by Associate Editor R. Lake.


  • 1T-DRAM
  • Capacitor-less
  • floating body effect
  • partially depleted (PD)
  • silicon nanowire transistor (SNWT)

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering


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