Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition

Ji Hun Park; Samseok Jang; Dongjin Byun; Joong Kee Lee

doi:10.1016/j.tsf.2011.04.048

Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition

Ji Hun Park, Samseok Jang, Dongjin Byun, Joong Kee Lee

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10^{- 4} Ω cm.

Original language	English
Pages (from-to)	6863-6867
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2011.04.048
Publication status	Published - 2011 Aug 1

Keywords

Composite film
ECR-CVD
Electrical and optical properties
Texture coefficient

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.04.048

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Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition. / Park, Ji Hun; Jang, Samseok; Byun, Dongjin et al.
In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6863-6867.

Research output: Contribution to journal › Article › peer-review

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title = "Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition",

abstract = "The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.",

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AU - Byun, Dongjin

AU - Lee, Joong Kee

PY - 2011/8/1

Y1 - 2011/8/1

N2 - The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.

AB - The undoped and fluorine doped gallium tin oxide composite films are prepared by an electron cyclotron resonance metal organic chemical vapor deposition. Characteristics of structural, optical and electrical properties of the fluorine doped gallium tin oxide composite thin films are investigated. The four point probe method, atomic force microscopy and X-ray photoelectron spectroscopy are employed to characterize the composite thin films. UV-visible, X-ray diffraction, scanning electron microscope and Hall measurement performed on fluorine doped gallium tin oxide composite are films deposited on polyethylene terephthalate substrates. The diffraction pattern shows the presence of tetragonal structure with (112) special orientation for fluorine doped gallium tin oxide composite films. The doped composite film on F/Ga + Sn mole ratio of 0.35 is observed the lowest electrical resistivity of 3.35 × 10- 4 Ω cm.

KW - Composite film

KW - ECR-CVD

KW - Electrical and optical properties

KW - Texture coefficient

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Fluorine doped gallium tin oxide composite films as transparent conductive oxides on polyethylene terephthalate film prepared by electron cyclotron resonance metal organic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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