Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

Jin Soo Kim, Cheul Ro Lee, In Hwan Lee, Jae Young Leem, Jong Su Kim, Mee Yi Ryu

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10 Citations (Scopus)


This article reports the structural and optical properties of shape-engineered InAs/InAlGaAs quantum dots (QDs) on InP substrates formed using an alternate growth method (AGQDs), where a thin InAs layer (0.8 or 1 monolayer) and a thin InAlGaAs layer (1 monolayer) were deposited alternately. For five-stacked AGQD layers, a double-peak feature was observed in the photoluminescence (PL) spectra. The two peaks were related to two different QD branches as confirmed by excitation-power-dependent PL. Observation of a double-peak feature in the PL spectra indicated that the growth conditions for the AGQD layers were not optimized. A slight increase in growth temperature resulted in the merging of the double-peak feature to a single peak with a relatively narrow PL linewidth.

Original languageEnglish
Article number073501
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 2007
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported in part by the Ministry of Information and Communication of Republic of Korea (Grant No. 06MB2510) and in part by research funds of Chonbuk National University in 2006 (NP-2006-105897001).

ASJC Scopus subject areas

  • General Physics and Astronomy


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