Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

Jin Soo Kim; Cheul Ro Lee; In Hwan Lee; Jae Young Leem; Jong Su Kim; Mee Yi Ryu

doi:10.1063/1.2785001

Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

Jin Soo Kim, Cheul Ro Lee, In Hwan Lee, Jae Young Leem, Jong Su Kim, Mee Yi Ryu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

This article reports the structural and optical properties of shape-engineered InAs/InAlGaAs quantum dots (QDs) on InP substrates formed using an alternate growth method (AGQDs), where a thin InAs layer (0.8 or 1 monolayer) and a thin InAlGaAs layer (1 monolayer) were deposited alternately. For five-stacked AGQD layers, a double-peak feature was observed in the photoluminescence (PL) spectra. The two peaks were related to two different QD branches as confirmed by excitation-power-dependent PL. Observation of a double-peak feature in the PL spectra indicated that the growth conditions for the AGQD layers were not optimized. A slight increase in growth temperature resulted in the merging of the double-peak feature to a single peak with a relatively narrow PL linewidth.

Original language	English
Article number	073501
Journal	Journal of Applied Physics
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.2785001
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.2785001

Cite this

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title = "Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates",

abstract = "This article reports the structural and optical properties of shape-engineered InAs/InAlGaAs quantum dots (QDs) on InP substrates formed using an alternate growth method (AGQDs), where a thin InAs layer (0.8 or 1 monolayer) and a thin InAlGaAs layer (1 monolayer) were deposited alternately. For five-stacked AGQD layers, a double-peak feature was observed in the photoluminescence (PL) spectra. The two peaks were related to two different QD branches as confirmed by excitation-power-dependent PL. Observation of a double-peak feature in the PL spectra indicated that the growth conditions for the AGQD layers were not optimized. A slight increase in growth temperature resulted in the merging of the double-peak feature to a single peak with a relatively narrow PL linewidth.",

author = "Kim, {Jin Soo} and Lee, {Cheul Ro} and Lee, {In Hwan} and Leem, {Jae Young} and Kim, {Jong Su} and Ryu, {Mee Yi}",

note = "Funding Information: This work was supported in part by the Ministry of Information and Communication of Republic of Korea (Grant No. 06MB2510) and in part by research funds of Chonbuk National University in 2006 (NP-2006-105897001).",

year = "2007",

doi = "10.1063/1.2785001",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

AU - Kim, Jin Soo

AU - Lee, Cheul Ro

AU - Lee, In Hwan

AU - Leem, Jae Young

AU - Kim, Jong Su

AU - Ryu, Mee Yi

N1 - Funding Information: This work was supported in part by the Ministry of Information and Communication of Republic of Korea (Grant No. 06MB2510) and in part by research funds of Chonbuk National University in 2006 (NP-2006-105897001).

PY - 2007

Y1 - 2007

N2 - This article reports the structural and optical properties of shape-engineered InAs/InAlGaAs quantum dots (QDs) on InP substrates formed using an alternate growth method (AGQDs), where a thin InAs layer (0.8 or 1 monolayer) and a thin InAlGaAs layer (1 monolayer) were deposited alternately. For five-stacked AGQD layers, a double-peak feature was observed in the photoluminescence (PL) spectra. The two peaks were related to two different QD branches as confirmed by excitation-power-dependent PL. Observation of a double-peak feature in the PL spectra indicated that the growth conditions for the AGQD layers were not optimized. A slight increase in growth temperature resulted in the merging of the double-peak feature to a single peak with a relatively narrow PL linewidth.

AB - This article reports the structural and optical properties of shape-engineered InAs/InAlGaAs quantum dots (QDs) on InP substrates formed using an alternate growth method (AGQDs), where a thin InAs layer (0.8 or 1 monolayer) and a thin InAlGaAs layer (1 monolayer) were deposited alternately. For five-stacked AGQD layers, a double-peak feature was observed in the photoluminescence (PL) spectra. The two peaks were related to two different QD branches as confirmed by excitation-power-dependent PL. Observation of a double-peak feature in the PL spectra indicated that the growth conditions for the AGQD layers were not optimized. A slight increase in growth temperature resulted in the merging of the double-peak feature to a single peak with a relatively narrow PL linewidth.

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U2 - 10.1063/1.2785001

DO - 10.1063/1.2785001

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VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Formation characteristics of shape-engineered InAs/InAlGaAs quantum dots grown on InP substrates

Abstract

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