Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N

Ja Soon Jang; Tae Yeon Seong; Seong Ran Jeon

doi:10.1063/1.2778452

Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N

Ja Soon Jang^*
, Tae Yeon Seong
, Seong Ran Jeon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The authors report on the formation of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped AlGaN. The contacts become Ohmic with a contact resistivity of (1.4±0.3) × 10-5 cm2 upon annealing at 600 °C for 1 min in a N2 ambient. The samples do not experience significant degradation of the specific contact resistance and the surface roughness even after annealing at 600 °C for 60 min. Based on x-ray photoelectron spectroscopy depth profile results, atomic force microscopy, and contact resistivity-temperature data, possible Ohmic formation and carrier transport mechanisms are described and discussed.

Original language	English
Article number	092129
Journal	Applied Physics Letters
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.2778452
Publication status	Published - 2007

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Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2778452

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title = "Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N",

abstract = "The authors report on the formation of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped AlGaN. The contacts become Ohmic with a contact resistivity of (1.4±0.3) × 10-5 cm2 upon annealing at 600 °C for 1 min in a N2 ambient. The samples do not experience significant degradation of the specific contact resistance and the surface roughness even after annealing at 600 °C for 60 min. Based on x-ray photoelectron spectroscopy depth profile results, atomic force microscopy, and contact resistivity-temperature data, possible Ohmic formation and carrier transport mechanisms are described and discussed.",

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AU - Jang, Ja Soon

AU - Seong, Tae Yeon

AU - Jeon, Seong Ran

PY - 2007

Y1 - 2007

N2 - The authors report on the formation of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped AlGaN. The contacts become Ohmic with a contact resistivity of (1.4±0.3) × 10-5 cm2 upon annealing at 600 °C for 1 min in a N2 ambient. The samples do not experience significant degradation of the specific contact resistance and the surface roughness even after annealing at 600 °C for 60 min. Based on x-ray photoelectron spectroscopy depth profile results, atomic force microscopy, and contact resistivity-temperature data, possible Ohmic formation and carrier transport mechanisms are described and discussed.

AB - The authors report on the formation of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped AlGaN. The contacts become Ohmic with a contact resistivity of (1.4±0.3) × 10-5 cm2 upon annealing at 600 °C for 1 min in a N2 ambient. The samples do not experience significant degradation of the specific contact resistance and the surface roughness even after annealing at 600 °C for 60 min. Based on x-ray photoelectron spectroscopy depth profile results, atomic force microscopy, and contact resistivity-temperature data, possible Ohmic formation and carrier transport mechanisms are described and discussed.

UR - https://www.scopus.com/pages/publications/34548396318

U2 - 10.1063/1.2778452

DO - 10.1063/1.2778452

M3 - Article

AN - SCOPUS:34548396318

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092129

ER -

Formation mechanisms of low-resistance and thermally stable PdNiPdRu Ohmic contacts to Mg-doped Al0.15 Ga0.85 N

Abstract

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