Abstract
Strong photoluminescence (PL) centered at 600 nm was observed from europium-silicate thin films. The films were fabricated on Si(100) substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA) in a nitrogen ambient. The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction spectroscopy and Auger electron spectroscopy. The optical transitions associated with divalent europium ions are thought to be responsible for the intense red PL emitted from the europium-silicate thin films.
| Original language | English |
|---|---|
| Pages (from-to) | 1246-1249 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 48 |
| Issue number | 6 |
| Publication status | Published - 2006 Jun |
Keywords
- Europium silicate
- Photoluminescence
- Rapid thermal annealing
- Red emission
- rf-sputtering
ASJC Scopus subject areas
- Physics and Astronomy(all)