Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Jun Ho Kim; Da Som Kim; Sun Kyung Kim; Young Zo Yoo; Jeong Hwan Lee; Sang Woo Kim; Tae Yeon Seong

doi:10.1007/s11664-016-4612-4

Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Jun Ho Kim, Da Som Kim, Sun Kyung Kim, Young Zo Yoo, Jeong Hwan Lee, Sang Woo Kim, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 10²⁰ and 7.68 × 10²¹ cm⁻³ and mobilities of 27.18 cm²/V s and 18.17 cm²/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10⁻³ for the ITO film and 45.02 × 10⁻³ Ω⁻¹ for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

Original language	English
Pages (from-to)	4265-4269
Number of pages	5
Journal	Journal of Electronic Materials
Volume	45
Issue number	8
DOIs	https://doi.org/10.1007/s11664-016-4612-4
Publication status	Published - 2016 Aug 1

Bibliographical note

Publisher Copyright:
© 2016, The Minerals, Metals & Materials Society.

Keywords

Ag
InGaZnO
flexible
multilayer
transparent conducting electrode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-016-4612-4

Cite this

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title = "Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film",

abstract = "In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke{\textquoteright}s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.",

keywords = "Ag, InGaZnO, flexible, multilayer, transparent conducting electrode",

author = "Kim, {Jun Ho} and Kim, {Da Som} and Kim, {Sun Kyung} and Yoo, {Young Zo} and Lee, {Jeong Hwan} and Kim, {Sang Woo} and Seong, {Tae Yeon}",

note = "Publisher Copyright: {\textcopyright} 2016, The Minerals, Metals & Materials Society.",

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doi = "10.1007/s11664-016-4612-4",

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AU - Kim, Jun Ho

AU - Kim, Da Som

AU - Kim, Sun Kyung

AU - Yoo, Young Zo

AU - Lee, Jeong Hwan

AU - Kim, Sang Woo

AU - Seong, Tae Yeon

PY - 2016/8/1

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N2 - In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

AB - In this study, the electrical, optical, and bending characteristics of amorphous indium gallium zinc oxide (IGZO)/Ag/IGZO (39 nm/19 nm/39 nm) multilayer films deposited on polyethylene terephthalate (PET) substrate at room temperature were investigated and compared with those of Sn-doped indium oxide (ITO) (100 nm thick) films. At 500 nm the ITO film transmitted 91.3% and the IGZO/Ag/IGZO multilayer film transmitted 88.8%. The calculated transmittance spectrum of the multilayer film was similar to the experimental result. The ITO film and IGZO/Ag/IGZO multilayer film, respectively, showed carrier concentrations of 1.79 × 1020 and 7.68 × 1021 cm−3 and mobilities of 27.18 cm2/V s and 18.17 cm2/V s. The ITO film had a sheet resistance of 134.9 Ω/sq and the IGZO/Ag/IGZO multilayer film one of 5.09 Ω/sq. Haacke’s figure of merit (FOM) was calculated to be 1.94 × 10−3 for the ITO film and 45.02 × 10−3 Ω−1 for the IGZO/Ag/IGZO multilayer film. The resistance change of 100 nm-thick ITO film was unstable even after five cycles, while that of the IGZO/Ag/IGZO film was constant up to 1000 cycles.

KW - Ag

KW - InGaZnO

KW - flexible

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KW - transparent conducting electrode

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ER -

Formation of Flexible and Transparent Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Film

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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